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ORCID: https://orcid.org/0000-0003-2369-3017, Martí Vega, Antonio
ORCID: https://orcid.org/0000-0002-8841-7091 and Luque López, Antonio
ORCID: https://orcid.org/0000-0002-8357-6413
(2012).
Effect of concentration on the performance of quantum dot intermediate-band solar cells.
En: "8th International Conference on Concentrating Photovoltaic Systems", 16/04/2012 - 18/04/2012, Toledo, España. ISBN 978-0-7354-1086-2. pp. 10-13.
https://doi.org/10.1063/1.4753822.
| Título: | Effect of concentration on the performance of quantum dot intermediate-band solar cells |
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| Autor/es: |
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| Tipo de Documento: | Ponencia en Congreso o Jornada (Artículo) |
| Título del Evento: | 8th International Conference on Concentrating Photovoltaic Systems |
| Fechas del Evento: | 16/04/2012 - 18/04/2012 |
| Lugar del Evento: | Toledo, España |
| Título del Libro: | 8th International Conference on Concentrating Photovoltaic Systems |
| Fecha: | 16 Abril 2012 |
| ISBN: | 978-0-7354-1086-2 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | quantum dot solar cell, intermediate-band solar cell, concentration, self-consistent device simulation |
| Escuela: | Instituto de Energía Solar (IES) (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
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Implementation of a high-efficiency quantum dot intermediate-band solar cell (QD-IBSC) must accompany a sufficient photocurrent generation via IB states. The demonstration of a QD-IBSC is presently undergoing two stages. The first is to develop a technology to fabricate high-density QD stacks or a superlattice of low defect density placed within the active region of a p-i-n SC, and the second is to realize half-filled IB states to maximize the photocurrent generation by two-step absorption of sub-bandgap photons. For this, we have investigated the effect of light concentration on the characteristics of QDSCs comprised of multi-layer stacks of self-organized InAs/GaNAs QDs grown with and without impurity doping in molecular beam epitaxy.
| ID de Registro: | 19801 |
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| Identificador DC: | https://oa.upm.es/19801/ |
| Identificador OAI: | oai:oa.upm.es:19801 |
| Identificador DOI: | 10.1063/1.4753822 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 18 Sep 2013 16:16 |
| Ultima Modificación: | 21 Abr 2016 21:18 |
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