Effect of concentration on the performance of quantum dot intermediate-band solar cells

Okada, Y. and Yoshida, Katsuhisa and Shoji, Y. and Ogura, A. and García-Linares Fontes, Pablo and Martí Vega, Antonio and Luque López, Antonio (2012). Effect of concentration on the performance of quantum dot intermediate-band solar cells. In: "8th International Conference on Concentrating Photovoltaic Systems", 16/04/2012 - 18/04/2012, Toledo, España. ISBN 978-0-7354-1086-2. pp. 10-13. https://doi.org/10.1063/1.4753822.

Description

Title: Effect of concentration on the performance of quantum dot intermediate-band solar cells
Author/s:
  • Okada, Y.
  • Yoshida, Katsuhisa
  • Shoji, Y.
  • Ogura, A.
  • García-Linares Fontes, Pablo
  • Martí Vega, Antonio
  • Luque López, Antonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 8th International Conference on Concentrating Photovoltaic Systems
Event Dates: 16/04/2012 - 18/04/2012
Event Location: Toledo, España
Title of Book: 8th International Conference on Concentrating Photovoltaic Systems
Date: 16 April 2012
ISBN: 978-0-7354-1086-2
Subjects:
Freetext Keywords: quantum dot solar cell, intermediate-band solar cell, concentration, self-consistent device simulation
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Implementation of a high-efficiency quantum dot intermediate-band solar cell (QD-IBSC) must accompany a sufficient photocurrent generation via IB states. The demonstration of a QD-IBSC is presently undergoing two stages. The first is to develop a technology to fabricate high-density QD stacks or a superlattice of low defect density placed within the active region of a p-i-n SC, and the second is to realize half-filled IB states to maximize the photocurrent generation by two-step absorption of sub-bandgap photons. For this, we have investigated the effect of light concentration on the characteristics of QDSCs comprised of multi-layer stacks of self-organized InAs/GaNAs QDs grown with and without impurity doping in molecular beam epitaxy.

More information

Item ID: 19801
DC Identifier: http://oa.upm.es/19801/
OAI Identifier: oai:oa.upm.es:19801
DOI: 10.1063/1.4753822
Deposited by: Memoria Investigacion
Deposited on: 18 Sep 2013 16:16
Last Modified: 21 Apr 2016 21:18
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