Effect of concentration on the performance of quantum dot intermediate-band solar cells

Okada, Y., Yoshida, Katsuhisa, Shoji, Y., Ogura, A., García-Linares Fontes, Pablo ORCID: https://orcid.org/0000-0003-2369-3017, Martí Vega, Antonio ORCID: https://orcid.org/0000-0002-8841-7091 and Luque López, Antonio ORCID: https://orcid.org/0000-0002-8357-6413 (2012). Effect of concentration on the performance of quantum dot intermediate-band solar cells. En: "8th International Conference on Concentrating Photovoltaic Systems", 16/04/2012 - 18/04/2012, Toledo, España. ISBN 978-0-7354-1086-2. pp. 10-13. https://doi.org/10.1063/1.4753822.

Descripción

Título: Effect of concentration on the performance of quantum dot intermediate-band solar cells
Autor/es:
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 8th International Conference on Concentrating Photovoltaic Systems
Fechas del Evento: 16/04/2012 - 18/04/2012
Lugar del Evento: Toledo, España
Título del Libro: 8th International Conference on Concentrating Photovoltaic Systems
Fecha: 16 Abril 2012
ISBN: 978-0-7354-1086-2
Materias:
ODS:
Palabras Clave Informales: quantum dot solar cell, intermediate-band solar cell, concentration, self-consistent device simulation
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Implementation of a high-efficiency quantum dot intermediate-band solar cell (QD-IBSC) must accompany a sufficient photocurrent generation via IB states. The demonstration of a QD-IBSC is presently undergoing two stages. The first is to develop a technology to fabricate high-density QD stacks or a superlattice of low defect density placed within the active region of a p-i-n SC, and the second is to realize half-filled IB states to maximize the photocurrent generation by two-step absorption of sub-bandgap photons. For this, we have investigated the effect of light concentration on the characteristics of QDSCs comprised of multi-layer stacks of self-organized InAs/GaNAs QDs grown with and without impurity doping in molecular beam epitaxy.

Más información

ID de Registro: 19801
Identificador DC: https://oa.upm.es/19801/
Identificador OAI: oai:oa.upm.es:19801
Identificador DOI: 10.1063/1.4753822
Depositado por: Memoria Investigacion
Depositado el: 18 Sep 2013 16:16
Ultima Modificación: 21 Abr 2016 21:18