Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content

Iborra Grau, Enrique and Capilla Osorio, José and Olivares Roza, Jimena and Clement Lorenzo, Marta and Felmetsger, Valeriy (2012). Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content. In: "2012 IEEE International Ultrasonics Symposium (IUS)", 07/10/2012 - 10/10/2012, Dresde, Alemania. pp. 2734-2736.

Description

Title: Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content
Author/s:
  • Iborra Grau, Enrique
  • Capilla Osorio, José
  • Olivares Roza, Jimena
  • Clement Lorenzo, Marta
  • Felmetsger, Valeriy
Item Type: Presentation at Congress or Conference (Article)
Event Title: 2012 IEEE International Ultrasonics Symposium (IUS)
Event Dates: 07/10/2012 - 10/10/2012
Event Location: Dresde, Alemania
Title of Book: IEEE International Ultrasonics Symposium
Date: 2012
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview

Abstract

In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content menor que6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.

More information

Item ID: 20007
DC Identifier: http://oa.upm.es/20007/
OAI Identifier: oai:oa.upm.es:20007
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6562433
Deposited by: Memoria Investigacion
Deposited on: 28 Sep 2013 11:14
Last Modified: 21 Apr 2016 22:11
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM