Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content

Iborra Grau, Enrique; Capilla Osorio, José; Olivares Roza, Jimena; Clement Lorenzo, Marta y Felmetsger, Valeriy (2012). Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content. En: "2012 IEEE International Ultrasonics Symposium (IUS)", 07/10/2012 - 10/10/2012, Dresde, Alemania. pp. 2734-2736.

Descripción

Título: Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content
Autor/es:
  • Iborra Grau, Enrique
  • Capilla Osorio, José
  • Olivares Roza, Jimena
  • Clement Lorenzo, Marta
  • Felmetsger, Valeriy
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 2012 IEEE International Ultrasonics Symposium (IUS)
Fechas del Evento: 07/10/2012 - 10/10/2012
Lugar del Evento: Dresde, Alemania
Título del Libro: IEEE International Ultrasonics Symposium
Fecha: 2012
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Electrónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content menor que6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.

Más información

ID de Registro: 20007
Identificador DC: http://oa.upm.es/20007/
Identificador OAI: oai:oa.upm.es:20007
URL Oficial: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6562433
Depositado por: Memoria Investigacion
Depositado el: 28 Sep 2013 11:14
Ultima Modificación: 21 Abr 2016 22:11
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