Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si

Celeste Vega, Nadia and Tirado, Mónica and Comedi, David and Rodríguez Domínguez, Andrés and Rodríguez Rodríguez, Tomás and Hughes, Gareth M. and Grovenor, Chris R.M. and Audebert, Fernando (2012). Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si. In: "Materials Research Sao Paulo 2011", 30/09/2011 - 02/10/2011, Sao Paulo, Brasil. pp. 1-6.

Description

Title: Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si
Author/s:
  • Celeste Vega, Nadia
  • Tirado, Mónica
  • Comedi, David
  • Rodríguez Domínguez, Andrés
  • Rodríguez Rodríguez, Tomás
  • Hughes, Gareth M.
  • Grovenor, Chris R.M.
  • Audebert, Fernando
Item Type: Presentation at Congress or Conference (Article)
Event Title: Materials Research Sao Paulo 2011
Event Dates: 30/09/2011 - 02/10/2011
Event Location: Sao Paulo, Brasil
Title of Book: Materials Research
Date: December 2012
Volume: 16
Subjects:
Freetext Keywords: nanostructures, semiconductors, ZnO, photoluminescence, photoconductivity
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 °C and 720 °C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO2 interfaces. Photoluminescence, electrical conductance and photoconductance of ZnO-NFN was studied for the sample grown on SiO2. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances.

More information

Item ID: 20104
DC Identifier: http://oa.upm.es/20104/
OAI Identifier: oai:oa.upm.es:20104
Official URL: http://www.scielo.br/scielo.php?pid=S1516-14392013005000030&script=sci_arttext
Deposited by: Memoria Investigacion
Deposited on: 29 Sep 2013 10:44
Last Modified: 21 Apr 2016 22:29
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