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Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT
Cita
Romero Rojo, Fátima 
ORCID: https://orcid.org/0000-0002-3940-8009, Jiménez, A., Sánchez, José M., Braña, A.F., González-Posada Flores, Fernando, Cuerdo Bragado, Roberto, Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704 and Muñoz Merino, Elias ORCID: https://orcid.org/0000-0001-7482-2590
(2008).
Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT.
"IEEE Electron Device Letters", v. 29
(n. 3);
pp. 209-211.
ISSN 0741-3106.
https://doi.org/10.1109/LED.2008.915568.
ORCID: https://orcid.org/0000-0002-3940-8009, Jiménez, A., Sánchez, José M., Braña, A.F., González-Posada Flores, Fernando, Cuerdo Bragado, Roberto, Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704 and Muñoz Merino, Elias ORCID: https://orcid.org/0000-0001-7482-2590
(2008).
Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT.
"IEEE Electron Device Letters", v. 29
(n. 3);
pp. 209-211.
ISSN 0741-3106.
https://doi.org/10.1109/LED.2008.915568.
Descripción
| Título: | Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | IEEE Electron Device Letters |
| Fecha: | Marzo 2008 |
| ISSN: | 0741-3106 |
| Volumen: | 29 |
| Número: | 3 |
| Materias: | |
| ODS: | |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
The impact of in situ low-power plasma pretreatment, prior to silicon-nitride (SiN) deposition, was investigated in AlGaN/GaN high-electron mobility transistors (HEMTs). These studies reveal that the use of plasma in HEMT passivation reduces current-collapse and gate-lag effects. Such treatment is also beneficial to improve gate leakage, and from RF measurements, no degradation of was observed. These beneficial effects of the plasma pretreatment seem to be due to a significant reduction in interface charge density, as shown in this letter using GaN MIS devices, where a decrease of 60% was observed.
Más información
| ID de Registro: | 2020 |
|---|---|
| Identificador DC: | https://oa.upm.es/2020/ |
| Identificador OAI: | oai:oa.upm.es:2020 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/6564899 |
| Identificador DOI: | 10.1109/LED.2008.915568 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 21 Dic 2009 09:28 |
| Ultima Modificación: | 28 Abr 2026 08:03 |
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