Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

Romero Rojo, Fátima and Jiménez, A. and Sánchez, José M. and Braña, A.F. and González-Posada Flores, Fernando and Cuerdo Bragado, Roberto and Calle Gómez, Fernando and Muñoz Merino, Elias (2008). Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT. "IEEE Electron Device Letters", v. 29 (n. 3); pp. 209-211. ISSN 0741-3106. https://doi.org/10.1109/LED.2008.915568.

Description

Title: Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT
Author/s:
  • Romero Rojo, Fátima
  • Jiménez, A.
  • Sánchez, José M.
  • Braña, A.F.
  • González-Posada Flores, Fernando
  • Cuerdo Bragado, Roberto
  • Calle Gómez, Fernando
  • Muñoz Merino, Elias
Item Type: Article
Título de Revista/Publicación: IEEE Electron Device Letters
Date: March 2008
ISSN: 0741-3106
Volume: 29
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
UPM's Research Group: AlGaN-GaN HEMT MIS devices current-collapse gate-lag effects high-electron mobility transistors plasma pretreatment silicon-nitride deposition silicon-nitride passivation
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The impact of in situ low-power plasma pretreatment, prior to silicon-nitride (SiN) deposition, was investigated in AlGaN/GaN high-electron mobility transistors (HEMTs). These studies reveal that the use of plasma in HEMT passivation reduces current-collapse and gate-lag effects. Such treatment is also beneficial to improve gate leakage, and from RF measurements, no degradation of was observed. These beneficial effects of the plasma pretreatment seem to be due to a significant reduction in interface charge density, as shown in this letter using GaN MIS devices, where a decrease of 60% was observed.

More information

Item ID: 2020
DC Identifier: http://oa.upm.es/2020/
OAI Identifier: oai:oa.upm.es:2020
DOI: 10.1109/LED.2008.915568
Deposited by: Memoria Investigacion
Deposited on: 21 Dec 2009 09:28
Last Modified: 20 Apr 2016 11:49
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