A CAD framework for the characterization and use of Memristor models

Garcia-Redondo, Fernando; López Vallejo, Marisa; Ituero Herrero, Pablo y López Barrio, Carlos Alberto (2012). A CAD framework for the characterization and use of Memristor models. En: "2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2012 International Conference on", 19/09/2012 - 21/09/2012, Sevilla. ISBN 978-1-4673-0685-0. pp. 25-28. https://doi.org/10.1109/SMACD.2012.6339408.

Descripción

Título: A CAD framework for the characterization and use of Memristor models
Autor/es:
  • Garcia-Redondo, Fernando
  • López Vallejo, Marisa
  • Ituero Herrero, Pablo
  • López Barrio, Carlos Alberto
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2012 International Conference on
Fechas del Evento: 19/09/2012 - 21/09/2012
Lugar del Evento: Sevilla
Título del Libro: 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)
Fecha: Septiembre 2012
ISBN: 978-1-4673-0685-0
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In the recent years the missing fourth component, the memristor, was successfully synthesized. However, the mathematical complexity and variety of the models behind this component, in addition to the existence of convergence problems in the simulations, make the design of memristor-based applications long and difficult. In this work we present a memristor model characterization framework which supports the automated generation of subcircuit files. The proposed environment allows the designer to choose and parameterize the memristor model that best suits for a given application. The framework carries out characterizing simulations in order to study the possible non-convergence problems, solving the dependence on the simulation conditions and guaranteeing the functionality and performance of the design. Additionally, the occurrence of undesirable effects related to PVT variations is also taken into account. By performing a Monte Carlo or a corner analysis, the designer is aware of the safety margins which assure the correct device operation.

Más información

ID de Registro: 20502
Identificador DC: http://oa.upm.es/20502/
Identificador OAI: oai:oa.upm.es:20502
Identificador DOI: 10.1109/SMACD.2012.6339408
URL Oficial: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6339408
Depositado por: Memoria Investigacion
Depositado el: 07 Oct 2013 16:43
Ultima Modificación: 21 Abr 2016 23:20
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