A CAD framework for the characterization and use of Memristor models

Garcia-Redondo, Fernando and López Vallejo, Marisa and Ituero Herrero, Pablo and López Barrio, Carlos Alberto (2012). A CAD framework for the characterization and use of Memristor models. In: "2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2012 International Conference on", 19/09/2012 - 21/09/2012, Sevilla. ISBN 978-1-4673-0685-0. pp. 25-28. https://doi.org/10.1109/SMACD.2012.6339408.

Description

Title: A CAD framework for the characterization and use of Memristor models
Author/s:
  • Garcia-Redondo, Fernando
  • López Vallejo, Marisa
  • Ituero Herrero, Pablo
  • López Barrio, Carlos Alberto
Item Type: Presentation at Congress or Conference (Article)
Event Title: 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2012 International Conference on
Event Dates: 19/09/2012 - 21/09/2012
Event Location: Sevilla
Title of Book: 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)
Date: September 2012
ISBN: 978-1-4673-0685-0
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In the recent years the missing fourth component, the memristor, was successfully synthesized. However, the mathematical complexity and variety of the models behind this component, in addition to the existence of convergence problems in the simulations, make the design of memristor-based applications long and difficult. In this work we present a memristor model characterization framework which supports the automated generation of subcircuit files. The proposed environment allows the designer to choose and parameterize the memristor model that best suits for a given application. The framework carries out characterizing simulations in order to study the possible non-convergence problems, solving the dependence on the simulation conditions and guaranteeing the functionality and performance of the design. Additionally, the occurrence of undesirable effects related to PVT variations is also taken into account. By performing a Monte Carlo or a corner analysis, the designer is aware of the safety margins which assure the correct device operation.

More information

Item ID: 20502
DC Identifier: http://oa.upm.es/20502/
OAI Identifier: oai:oa.upm.es:20502
DOI: 10.1109/SMACD.2012.6339408
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6339408
Deposited by: Memoria Investigacion
Deposited on: 07 Oct 2013 16:43
Last Modified: 21 Apr 2016 23:20
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