Structural challenges in multijunction solar cells for ultra-high CPV

Espinet González, Pilar, Barrigón Montañés, Enrique, Ochoa Gómez, Mario ORCID: https://orcid.org/0000-0002-7108-3638, Barrutia Poncela, Laura ORCID: https://orcid.org/0000-0001-9363-6662, Orlando Carrillo, Vincenzo, Algora del Valle, Carlos ORCID: https://orcid.org/0000-0003-1872-7243 and Rey-Stolle Prado, Ignacio ORCID: https://orcid.org/0000-0002-4919-5609 (2012). Structural challenges in multijunction solar cells for ultra-high CPV. En: "28th European PV Solar Energy Conference and Exhibition", 24/09/2012 - 28/09/2012, Frankfurt, Germany. pp. 146-149. https://doi.org/10.4229/27thEUPVSEC2012-1BO.12.3.

Descripción

Título: Structural challenges in multijunction solar cells for ultra-high CPV
Autor/es:
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 28th European PV Solar Energy Conference and Exhibition
Fechas del Evento: 24/09/2012 - 28/09/2012
Lugar del Evento: Frankfurt, Germany
Título del Libro: European PV Solar Energy Conference and Exhibition
Fecha: 2012
Materias:
ODS:
Palabras Clave Informales: Multijunction solar cell, CPV, solar concentrator, tunnel junction, reliability
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The paths towards high efficiency multijunction solar cells operating inside real concentrators at ultra high concentration (>1000 suns) are described. The key addressed factors comprehend: 1) the development of an optimized tunnel junction with a high peak current density (240 A/cm2) to mitigate the non-uniform light profiles created by concentrators, 2) the inclusion of highly conductive semiconductor lateral layers to minimize the effects of the non-uniform light profiles in general, and the chromatic aberration in particular; and 3) an adequate design of reliability studies to test multijunction solar cells for real operation conditions in order to determine the fragile parts in the device and improve them. These challenges are faced by means of experimental and theoretical investigation using a quasi-3D distributed circuital model.

Más información

ID de Registro: 20614
Identificador DC: https://oa.upm.es/20614/
Identificador OAI: oai:oa.upm.es:20614
Identificador DOI: 10.4229/27thEUPVSEC2012-1BO.12.3
Depositado por: Memoria Investigacion
Depositado el: 08 Oct 2013 18:09
Ultima Modificación: 21 Abr 2016 23:26