Study of the Edge and Surface Cracks Influence in the Mechanical Strength of Silicon Wafers

Barredo Egusquiza, Josu ORCID: https://orcid.org/0000-0002-1321-2251, Hermanns, Lutz Karl Heinz ORCID: https://orcid.org/0000-0002-0367-3740, Fraile de Lerma, Alberto ORCID: https://orcid.org/0000-0001-9861-0728, Jimeno, Juan Carlos and Alarcón Álvarez, Enrique ORCID: https://orcid.org/0000-0001-6538-7814 (2009). Study of the Edge and Surface Cracks Influence in the Mechanical Strength of Silicon Wafers. En: "24th European Photovoltaic Solar Energy Conference and Exhibition", 21/09/2009-25/09/2009, Hamburg, Germany. ISBN 3-936338-25-6.

Descripción

Título: Study of the Edge and Surface Cracks Influence in the Mechanical Strength of Silicon Wafers
Autor/es:
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 24th European Photovoltaic Solar Energy Conference and Exhibition
Fechas del Evento: 21/09/2009-25/09/2009
Lugar del Evento: Hamburg, Germany
Título del Libro: Proceedings of the 24th European Photovoltaic Solar Energy Conference
Fecha: 2009
ISBN: 3-936338-25-6
Materias:
ODS:
Palabras Clave Informales: Cost reduction ; Defects ; Characterization
Escuela: E.T.S.I. Industriales (UPM)
Departamento: Mecánica Estructural y Construcciones Industriales [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The objective of the present study is the estimation of the depth to which the wire sawing process causes damage to the wafer surfaces. Previous analyses were carried out by means of the four line bending test. The characteristic of this test implied that the failure could be due to surface cracks located in the central zone of the wafer or near the edges. In order to evaluate the influence of the edge or surface cracks a new study has been carried out using the ball/ring on ring test. Description and results of the tests are presented. The preliminary analysis of the failure stress using analytical methods confirms the expected results. A Finite Element model developed to get more information of the test results is also presented.

Más información

ID de Registro: 21627
Identificador DC: https://oa.upm.es/21627/
Identificador OAI: oai:oa.upm.es:21627
URL Oficial: http://www.eupvsec-proceedings.com/proceedings?pap...
Depositado por: Biblioteca ETSI Industriales
Depositado el: 16 Nov 2013 07:37
Ultima Modificación: 21 Abr 2016 12:19