Combined grazing incidence RBS and TEM analysis of luminescent nano-SiGe/SiO2 multilayers.

Kling, Andreas and Rodríguez Domínguez, Andrés and Sangrador García, Jesús and Ortiz Esteban, María Isabel and Rodríguez Rodríguez, Tomás and Ballesteros Pérez, Carmen Inés and Soares, J.C. (2008). Combined grazing incidence RBS and TEM analysis of luminescent nano-SiGe/SiO2 multilayers.. "Nuclear Instruments and Methods in Physics Research Section B-Beam Interaction", v. 266 (n. 8); pp. 1397-1401. ISSN 0168-583X. https://doi.org/10.1016/j.nimb.2007.12.096.

Description

Title: Combined grazing incidence RBS and TEM analysis of luminescent nano-SiGe/SiO2 multilayers.
Author/s:
  • Kling, Andreas
  • Rodríguez Domínguez, Andrés
  • Sangrador García, Jesús
  • Ortiz Esteban, María Isabel
  • Rodríguez Rodríguez, Tomás
  • Ballesteros Pérez, Carmen Inés
  • Soares, J.C.
Item Type: Article
Título de Revista/Publicación: Nuclear Instruments and Methods in Physics Research Section B-Beam Interaction
Date: April 2008
ISSN: 0168-583X
Volume: 266
Subjects:
Freetext Keywords: Nanostructure multilayers; SiGe nanoparticles; LPCVD; Grazing incidence RBS; TEM.
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Multilayer structures with five periods of amorphous SiGe nanoparticles/SiO2 layers with different thickness were deposited by Low Pressure Chemical Vapor Deposition and annealed to crystallize the SiGe nanoparticles. The use of grazing incidence RBS was necessary to obtain sufficient depth resolution to separate the signals arising from the individual layers only a few nm thick. The average size and areal density of the embedded SiGe nanoparticles as well as the oxide interlayer thickness were determined from the RBS spectra. Details of eventual composition changes and diffusion processes caused by the annealing processes were also studied. Transmission Electron Microscopy was used to obtain complementary information on the structural parameters of the samples in order to check the information yielded by RBS. The study revealed that annealing at 900 °C for 60 s, enough to crystallize the SiGe nanoparticles, leaves the structure unaltered if the interlayer thickness is around 15 nm or higher.

More information

Item ID: 2227
DC Identifier: http://oa.upm.es/2227/
OAI Identifier: oai:oa.upm.es:2227
DOI: 10.1016/j.nimb.2007.12.096
Official URL: http://www.elsevier.com/wps/find/journaldescription.cws_home/505674/description#description
Deposited by: Memoria Investigacion
Deposited on: 09 Feb 2010 09:34
Last Modified: 20 Apr 2016 11:58
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