Combined grazing incidence RBS and TEM analysis of luminescent nano-SiGe/SiO2 multilayers.

Kling, Andreas; Rodríguez Domínguez, Andrés; Sangrador García, Jesús; Ortiz Esteban, María Isabel; Rodríguez Rodríguez, Tomás; Ballesteros Pérez, Carmen Inés y Soares, J.C. (2008). Combined grazing incidence RBS and TEM analysis of luminescent nano-SiGe/SiO2 multilayers.. "Nuclear Instruments and Methods in Physics Research Section B-Beam Interaction", v. 266 (n. 8); pp. 1397-1401. ISSN 0168-583X. https://doi.org/10.1016/j.nimb.2007.12.096.

Descripción

Título: Combined grazing incidence RBS and TEM analysis of luminescent nano-SiGe/SiO2 multilayers.
Autor/es:
  • Kling, Andreas
  • Rodríguez Domínguez, Andrés
  • Sangrador García, Jesús
  • Ortiz Esteban, María Isabel
  • Rodríguez Rodríguez, Tomás
  • Ballesteros Pérez, Carmen Inés
  • Soares, J.C.
Tipo de Documento: Artículo
Título de Revista/Publicación: Nuclear Instruments and Methods in Physics Research Section B-Beam Interaction
Fecha: Abril 2008
Volumen: 266
Materias:
Palabras Clave Informales: Nanostructure multilayers; SiGe nanoparticles; LPCVD; Grazing incidence RBS; TEM.
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Electrónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Multilayer structures with five periods of amorphous SiGe nanoparticles/SiO2 layers with different thickness were deposited by Low Pressure Chemical Vapor Deposition and annealed to crystallize the SiGe nanoparticles. The use of grazing incidence RBS was necessary to obtain sufficient depth resolution to separate the signals arising from the individual layers only a few nm thick. The average size and areal density of the embedded SiGe nanoparticles as well as the oxide interlayer thickness were determined from the RBS spectra. Details of eventual composition changes and diffusion processes caused by the annealing processes were also studied. Transmission Electron Microscopy was used to obtain complementary information on the structural parameters of the samples in order to check the information yielded by RBS. The study revealed that annealing at 900 °C for 60 s, enough to crystallize the SiGe nanoparticles, leaves the structure unaltered if the interlayer thickness is around 15 nm or higher.

Más información

ID de Registro: 2227
Identificador DC: http://oa.upm.es/2227/
Identificador OAI: oai:oa.upm.es:2227
Identificador DOI: 10.1016/j.nimb.2007.12.096
URL Oficial: http://www.elsevier.com/wps/find/journaldescription.cws_home/505674/description#description
Depositado por: Memoria Investigacion
Depositado el: 09 Feb 2010 09:34
Ultima Modificación: 20 Abr 2016 11:58
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