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Super-high-frequency SAW resonators on AlN/Diamond
Cita
Rodriguez Madrid, Juan, Fuentes Iriarte, Gonzalo 
ORCID: https://orcid.org/0000-0003-3803-6474, Pedrós Ayala, Jorge ORCID: https://orcid.org/0000-0002-3154-0187, Williams, Oliver A., Brink, Dietmar and Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704
(2012).
Super-high-frequency SAW resonators on AlN/Diamond.
"IEEE Electron Device Letters", v. 33
(n. 4);
pp. 495-497.
ISSN 0741-3106.
https://doi.org/10.1109/LED.2012.2183851.
ORCID: https://orcid.org/0000-0003-3803-6474, Pedrós Ayala, Jorge ORCID: https://orcid.org/0000-0002-3154-0187, Williams, Oliver A., Brink, Dietmar and Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704
(2012).
Super-high-frequency SAW resonators on AlN/Diamond.
"IEEE Electron Device Letters", v. 33
(n. 4);
pp. 495-497.
ISSN 0741-3106.
https://doi.org/10.1109/LED.2012.2183851.
Descripción
| Título: | Super-high-frequency SAW resonators on AlN/Diamond |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | IEEE Electron Device Letters |
| Fecha: | Abril 2012 |
| ISSN: | 0741-3106 |
| Volumen: | 33 |
| Número: | 4 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | AlN/diamond, surface acoustic wave (SAW) resonator, super-high-frequency band, thickness influence |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10–14 GHz range with up to 36 dB out-of-band rejection.
Más información
| ID de Registro: | 22297 |
|---|---|
| Identificador DC: | https://oa.upm.es/22297/ |
| Identificador OAI: | oai:oa.upm.es:22297 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5487130 |
| Identificador DOI: | 10.1109/LED.2012.2183851 |
| URL Oficial: | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 09 Feb 2014 08:49 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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