Super-high-frequency SAW resonators on AlN/Diamond

Rodriguez Madrid, Juan and Fuentes Iriarte, Gonzalo and Pedrós Ayala, Jorge and Williams, Oliver A. and Brink, Dietmar and Calle Gómez, Fernando (2012). Super-high-frequency SAW resonators on AlN/Diamond. "IEEE Electron Device Letters", v. 33 (n. 4); pp. 495-497. ISSN 0741-3106. https://doi.org/10.1109/LED.2012.2183851.

Description

Title: Super-high-frequency SAW resonators on AlN/Diamond
Author/s:
  • Rodriguez Madrid, Juan
  • Fuentes Iriarte, Gonzalo
  • Pedrós Ayala, Jorge
  • Williams, Oliver A.
  • Brink, Dietmar
  • Calle Gómez, Fernando
Item Type: Article
Título de Revista/Publicación: IEEE Electron Device Letters
Date: April 2012
ISSN: 0741-3106
Volume: 33
Subjects:
Freetext Keywords: AlN/diamond, surface acoustic wave (SAW) resonator, super-high-frequency band, thickness influence
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10–14 GHz range with up to 36 dB out-of-band rejection.

More information

Item ID: 22297
DC Identifier: http://oa.upm.es/22297/
OAI Identifier: oai:oa.upm.es:22297
DOI: 10.1109/LED.2012.2183851
Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6158573
Deposited by: Memoria Investigacion
Deposited on: 09 Feb 2014 08:49
Last Modified: 16 Apr 2015 13:50
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