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Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
Cita
Pandey, Saurabh, Cavalcoli, Daniela, Fraboni, Beatrice, Cavallini, Anna, Brazzini, Tommaso and Calle Gómez, Fernando 
ORCID: https://orcid.org/0000-0001-7869-6704
(2012).
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures.
"Applied Physics Letters", v. 100
(n. 15);
pp..
ISSN 0003-6951.
https://doi.org/10.1063/1.4703938.
ORCID: https://orcid.org/0000-0001-7869-6704
(2012).
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures.
"Applied Physics Letters", v. 100
(n. 15);
pp..
ISSN 0003-6951.
https://doi.org/10.1063/1.4703938.
Descripción
| Título: | Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Applied Physics Letters |
| Fecha: | Abril 2012 |
| ISSN: | 0003-6951 |
| Volumen: | 100 |
| Número: | 15 |
| Materias: | |
| ODS: | |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Otro |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.
Más información
| ID de Registro: | 22315 |
|---|---|
| Identificador DC: | https://oa.upm.es/22315/ |
| Identificador OAI: | oai:oa.upm.es:22315 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5487159 |
| Identificador DOI: | 10.1063/1.4703938 |
| URL Oficial: | http://scitation.aip.org/content/aip/journal/apl/1... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 09 Feb 2014 08:20 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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