Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

Pandey, Saurabh and Cavalcoli, Daniela and Fraboni, Beatrice and Cavallini, Anna and Brazzini, Tommaso and Calle Gómez, Fernando (2012). Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures. "Applied Physics Letters", v. 100 (n. 15); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4703938.

Description

Title: Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
Author/s:
  • Pandey, Saurabh
  • Cavalcoli, Daniela
  • Fraboni, Beatrice
  • Cavallini, Anna
  • Brazzini, Tommaso
  • Calle Gómez, Fernando
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: April 2012
ISSN: 0003-6951
Volume: 100
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.

More information

Item ID: 22315
DC Identifier: http://oa.upm.es/22315/
OAI Identifier: oai:oa.upm.es:22315
DOI: 10.1063/1.4703938
Official URL: http://scitation.aip.org/content/aip/journal/apl/100/15/10.1063/1.4703938
Deposited by: Memoria Investigacion
Deposited on: 09 Feb 2014 08:20
Last Modified: 22 Sep 2014 11:30
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