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ORCID: https://orcid.org/0000-0001-7869-6704
(2012).
Nanocrack-induced leakage current in AlInN/AlN/GaN.
"Scripta Materialia", v. 66
(n. 6);
pp. 327-330.
ISSN 1359-6462.
https://doi.org/10.1016/j.scriptamat.2011.11.024.
| Título: | Nanocrack-induced leakage current in AlInN/AlN/GaN |
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| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Scripta Materialia |
| Fecha: | Marzo 2012 |
| ISSN: | 1359-6462 |
| Volumen: | 66 |
| Número: | 6 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | C-AFM; Indium; Segregation; Nano-cracks; AlInN/AlN/GaN |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
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Here we report on the study of nano-crack formation in Al1−xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1−xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1−xInxN acting as conductive paths was assessed with conductive atomic force microscopy.
| ID de Registro: | 22688 |
|---|---|
| Identificador DC: | https://oa.upm.es/22688/ |
| Identificador OAI: | oai:oa.upm.es:22688 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5487056 |
| Identificador DOI: | 10.1016/j.scriptamat.2011.11.024 |
| URL Oficial: | http://www.sciencedirect.com/science/article/pii/S... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 03 Mar 2014 17:47 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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