Nanocrack-induced leakage current in AlInN/AlN/GaN

Minj, Albert and Cavalcoli, Daniela and Pandey, Saurabh and Fraboni, Beatrice and Cavallini, Anna and Brazzini, Tommaso and Calle Gómez, Fernando (2012). Nanocrack-induced leakage current in AlInN/AlN/GaN. "Scripta Materialia", v. 66 (n. 6); pp. 327-330. ISSN 1359-6462. https://doi.org/10.1016/j.scriptamat.2011.11.024.

Description

Title: Nanocrack-induced leakage current in AlInN/AlN/GaN
Author/s:
  • Minj, Albert
  • Cavalcoli, Daniela
  • Pandey, Saurabh
  • Fraboni, Beatrice
  • Cavallini, Anna
  • Brazzini, Tommaso
  • Calle Gómez, Fernando
Item Type: Article
Título de Revista/Publicación: Scripta Materialia
Date: March 2012
ISSN: 1359-6462
Volume: 66
Subjects:
Freetext Keywords: C-AFM; Indium; Segregation; Nano-cracks; AlInN/AlN/GaN
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Here we report on the study of nano-crack formation in Al1−xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1−xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1−xInxN acting as conductive paths was assessed with conductive atomic force microscopy.

More information

Item ID: 22688
DC Identifier: http://oa.upm.es/22688/
OAI Identifier: oai:oa.upm.es:22688
DOI: 10.1016/j.scriptamat.2011.11.024
Official URL: http://www.sciencedirect.com/science/article/pii/S1359646211007172
Deposited by: Memoria Investigacion
Deposited on: 03 Mar 2014 17:47
Last Modified: 21 Apr 2016 17:41
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