Nanocrack-induced leakage current in AlInN/AlN/GaN

Minj, Albert, Cavalcoli, Daniela, Pandey, Saurabh, Fraboni, Beatrice, Cavallini, Anna, Brazzini, Tommaso and Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704 (2012). Nanocrack-induced leakage current in AlInN/AlN/GaN. "Scripta Materialia", v. 66 (n. 6); pp. 327-330. ISSN 1359-6462. https://doi.org/10.1016/j.scriptamat.2011.11.024.

Descripción

Título: Nanocrack-induced leakage current in AlInN/AlN/GaN
Autor/es:
Tipo de Documento: Artículo
Título de Revista/Publicación: Scripta Materialia
Fecha: Marzo 2012
ISSN: 1359-6462
Volumen: 66
Número: 6
Materias:
ODS:
Palabras Clave Informales: C-AFM; Indium; Segregation; Nano-cracks; AlInN/AlN/GaN
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Here we report on the study of nano-crack formation in Al1−xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1−xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1−xInxN acting as conductive paths was assessed with conductive atomic force microscopy.

Más información

ID de Registro: 22688
Identificador DC: https://oa.upm.es/22688/
Identificador OAI: oai:oa.upm.es:22688
URL Portal Científico: https://portalcientifico.upm.es/es/ipublic/item/5487056
Identificador DOI: 10.1016/j.scriptamat.2011.11.024
URL Oficial: http://www.sciencedirect.com/science/article/pii/S...
Depositado por: Memoria Investigacion
Depositado el: 03 Mar 2014 17:47
Ultima Modificación: 12 Nov 2025 00:00