Elements of the design and analysis band solar of quantum-dot intermediate cells

Martí Vega, Antonio and Antolín Fernández, Elisa and Cánovas Díaz, Enrique and López Martínez, Nair and García-Linares Fontes, Pablo and Luque López, Antonio and Stanley, Colin and Farmer, C.D. (2008). Elements of the design and analysis band solar of quantum-dot intermediate cells. "Thin Solid Films", v. 516 (n. 20); pp. 6716-6722. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2007.12.064.

Description

Title: Elements of the design and analysis band solar of quantum-dot intermediate cells
Author/s:
  • Martí Vega, Antonio
  • Antolín Fernández, Elisa
  • Cánovas Díaz, Enrique
  • López Martínez, Nair
  • García-Linares Fontes, Pablo
  • Luque López, Antonio
  • Stanley, Colin
  • Farmer, C.D.
Item Type: Article
Título de Revista/Publicación: Thin Solid Films
Date: August 2008
ISSN: 0040-6090
Volume: 516
Subjects:
Freetext Keywords: Quantum dots; intermediate band; photovoltaics; solar cells; solar concentration; novel concepts; InAs; GaAs; efficiency; circuit model.
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We have demonstrated recently that two below bandgap energy photons can lead to the creation of one electron–hole pair in a quantum-dot intermediate band solar cell (QD-IBSC). To be effective, the devices used in the experiments were designed to a) half-fill the intermediate band with electrons; b) to allocate the quantum dots in a flat-band potential region, and c) to prevent tunnelling from the n emitter into the intermediate band. QD-IBSCs have also shown degradation in their open-circuit voltage when compared with their counterparts without quantum dots. This loss is due to the presence of the intermediate band (IB) together with the incapacity of the quantum dots to absorb sufficient below bandgap light as to contribute significantly to the photogenerated current. It is predicted, nevertheless, that this voltage loss will diminish if concentration light is used leading to devices with efficiency higher than single gap solar cells. A circuit model that includes additional recombination levels to the ones introduced by the IB is described to support this discussion.

More information

Item ID: 2381
DC Identifier: http://oa.upm.es/2381/
OAI Identifier: oai:oa.upm.es:2381
DOI: 10.1016/j.tsf.2007.12.064
Official URL: http://www.elsevier.com/wps/find/journaldescription.cws_home/504106/description#description
Deposited by: Memoria Investigacion
Deposited on: 25 Feb 2010 12:25
Last Modified: 20 Apr 2016 12:05
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