Elements of the design and analysis band solar of quantum-dot intermediate cells

Martí Vega, Antonio; Antolín Fernández, Elisa; Cánovas Díaz, Enrique; López Martínez, Nair; García-Linares Fontes, Pablo; Luque López, Antonio; Stanley, Colin y Farmer, C.D. (2008). Elements of the design and analysis band solar of quantum-dot intermediate cells. "Thin Solid Films", v. 516 (n. 20); pp. 6716-6722. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2007.12.064.

Descripción

Título: Elements of the design and analysis band solar of quantum-dot intermediate cells
Autor/es:
  • Martí Vega, Antonio
  • Antolín Fernández, Elisa
  • Cánovas Díaz, Enrique
  • López Martínez, Nair
  • García-Linares Fontes, Pablo
  • Luque López, Antonio
  • Stanley, Colin
  • Farmer, C.D.
Tipo de Documento: Artículo
Título de Revista/Publicación: Thin Solid Films
Fecha: Agosto 2008
Volumen: 516
Materias:
Palabras Clave Informales: Quantum dots; intermediate band; photovoltaics; solar cells; solar concentration; novel concepts; InAs; GaAs; efficiency; circuit model.
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

We have demonstrated recently that two below bandgap energy photons can lead to the creation of one electron–hole pair in a quantum-dot intermediate band solar cell (QD-IBSC). To be effective, the devices used in the experiments were designed to a) half-fill the intermediate band with electrons; b) to allocate the quantum dots in a flat-band potential region, and c) to prevent tunnelling from the n emitter into the intermediate band. QD-IBSCs have also shown degradation in their open-circuit voltage when compared with their counterparts without quantum dots. This loss is due to the presence of the intermediate band (IB) together with the incapacity of the quantum dots to absorb sufficient below bandgap light as to contribute significantly to the photogenerated current. It is predicted, nevertheless, that this voltage loss will diminish if concentration light is used leading to devices with efficiency higher than single gap solar cells. A circuit model that includes additional recombination levels to the ones introduced by the IB is described to support this discussion.

Más información

ID de Registro: 2381
Identificador DC: http://oa.upm.es/2381/
Identificador OAI: oai:oa.upm.es:2381
Identificador DOI: 10.1016/j.tsf.2007.12.064
URL Oficial: http://www.elsevier.com/wps/find/journaldescription.cws_home/504106/description#description
Depositado por: Memoria Investigacion
Depositado el: 25 Feb 2010 12:25
Ultima Modificación: 20 Abr 2016 12:05
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