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In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
Cita
Fernández-Garrido, Sergio, Koblmüller, Gregor, Calleja Pardo, Enrique 
ORCID: https://orcid.org/0000-0002-3686-8982 and Speck, James S.
(2008).
In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction.
"Journal of Applied Physics", v. 104
(n. 3);
pp..
ISSN 0021-8979.
https://doi.org/10.1063/1.2968442.
ORCID: https://orcid.org/0000-0002-3686-8982 and Speck, James S.
(2008).
In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction.
"Journal of Applied Physics", v. 104
(n. 3);
pp..
ISSN 0021-8979.
https://doi.org/10.1063/1.2968442.
Descripción
| Título: | In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Journal of Applied Physics |
| Fecha: | Agosto 2008 |
| ISSN: | 0021-8979 |
| Volumen: | 104 |
| Número: | 3 |
| Materias: | |
| ODS: | |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition.
Más información
| ID de Registro: | 2586 |
|---|---|
| Identificador DC: | https://oa.upm.es/2586/ |
| Identificador OAI: | oai:oa.upm.es:2586 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/4170454 |
| Identificador DOI: | 10.1063/1.2968442 |
| URL Oficial: | http://jap.aip.org/japiau/v104/i3 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 23 Mar 2010 12:50 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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