In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

Fernández-Garrido, Sergio and Koblmüller, Gregor and Calleja Pardo, Enrique and Speck, James S. (2008). In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction. "Journal of Applied Physics", v. 104 (n. 3); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2968442.

Description

Title: In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
Author/s:
  • Fernández-Garrido, Sergio
  • Koblmüller, Gregor
  • Calleja Pardo, Enrique
  • Speck, James S.
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: August 2008
Volume: 104
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition.

More information

Item ID: 2586
DC Identifier: http://oa.upm.es/2586/
OAI Identifier: oai:oa.upm.es:2586
DOI: 10.1063/1.2968442
Official URL: http://jap.aip.org/japiau/v104/i3
Deposited by: Memoria Investigacion
Deposited on: 23 Mar 2010 12:50
Last Modified: 20 Apr 2016 12:14
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