Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Garcia Tabares Valdivieso, Elisa; García Vara, Iván; Martin, D. y Rey-Stolle Prado, Ignacio (2013). Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells. "Journal of Physics D: Applied Physics", v. 46 (n. 44); pp. 1-7. ISSN 0022-3727. https://doi.org/10.1088/0022-3727/46/44/445104.

Descripción

Título: Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells
Autor/es:
  • Garcia Tabares Valdivieso, Elisa
  • García Vara, Iván
  • Martin, D.
  • Rey-Stolle Prado, Ignacio
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Physics D: Applied Physics
Fecha: Noviembre 2013
Volumen: 46
Materias:
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes.

Más información

ID de Registro: 26279
Identificador DC: http://oa.upm.es/26279/
Identificador OAI: oai:oa.upm.es:26279
Identificador DOI: 10.1088/0022-3727/46/44/445104
URL Oficial: http://iopscience.iop.org/0022-3727/46/44/445104
Depositado por: Memoria Investigacion
Depositado el: 21 May 2014 17:24
Ultima Modificación: 01 Dic 2014 23:56
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