Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Garcia Tabares Valdivieso, Elisa and García Vara, Iván and Martin, D. and Rey-Stolle Prado, Ignacio (2013). Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells. "Journal of Physics D: Applied Physics", v. 46 (n. 44); pp. 1-7. ISSN 0022-3727. https://doi.org/10.1088/0022-3727/46/44/445104.

Description

Title: Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells
Author/s:
  • Garcia Tabares Valdivieso, Elisa
  • García Vara, Iván
  • Martin, D.
  • Rey-Stolle Prado, Ignacio
Item Type: Article
Título de Revista/Publicación: Journal of Physics D: Applied Physics
Date: November 2013
ISSN: 0022-3727
Volume: 46
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes.

More information

Item ID: 26279
DC Identifier: http://oa.upm.es/26279/
OAI Identifier: oai:oa.upm.es:26279
DOI: 10.1088/0022-3727/46/44/445104
Official URL: http://iopscience.iop.org/0022-3727/46/44/445104
Deposited by: Memoria Investigacion
Deposited on: 21 May 2014 17:24
Last Modified: 01 Dec 2014 23:56
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