Yaccuzzi, E. and Barrigón Montañés, Enrique and Rodríguez, Sebastián and Ochoa Gómez, Mario and Barrera, M. and Espinet González, Pilar and García, Javier and Ibarra, M. L. and Socolovsky, H. and Pérez, M. D. and Giudici, P. and Alurralde, M. and Algora del Valle, Carlos and Rey-Stolle Prado, Ignacio and Plá, J.
In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation.
In: "28th European Photovoltaic Solar Energy Conference and Exhibition", 30/09/2013 - 04/10/2013, París, France. pp. 526-530.
In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.