In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation

Yaccuzzi, E.; Barrigón Montañés, Enrique; Rodríguez, Sebastián; Ochoa Gómez, Mario; Barrera, M.; Espinet González, Pilar; García, Javier; Ibarra, M. L.; Socolovsky, H.; Pérez, M. D.; Giudici, P.; Alurralde, M.; Algora del Valle, Carlos; Rey-Stolle Prado, Ignacio y Plá, J. (2013). In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation. En: "28th European Photovoltaic Solar Energy Conference and Exhibition", 30/09/2013 - 04/10/2013, París, France. pp. 526-530. https://doi.org/10.4229/28thEUPVSEC2013-1CV.6.1.

Descripción

Título: In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation
Autor/es:
  • Yaccuzzi, E.
  • Barrigón Montañés, Enrique
  • Rodríguez, Sebastián
  • Ochoa Gómez, Mario
  • Barrera, M.
  • Espinet González, Pilar
  • García, Javier
  • Ibarra, M. L.
  • Socolovsky, H.
  • Pérez, M. D.
  • Giudici, P.
  • Alurralde, M.
  • Algora del Valle, Carlos
  • Rey-Stolle Prado, Ignacio
  • Plá, J.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 28th European Photovoltaic Solar Energy Conference and Exhibition
Fechas del Evento: 30/09/2013 - 04/10/2013
Lugar del Evento: París, France
Título del Libro: 28th European Photovoltaic Solar Energy Conference and Exhibition
Fecha: 2013
Materias:
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

Más información

ID de Registro: 26485
Identificador DC: http://oa.upm.es/26485/
Identificador OAI: oai:oa.upm.es:26485
Identificador DOI: 10.4229/28thEUPVSEC2013-1CV.6.1
Depositado por: Memoria Investigacion
Depositado el: 08 Jun 2014 12:08
Ultima Modificación: 22 Sep 2014 11:41
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