Composition and luminiscence of AllnGaNAN layers grown by plasma-assisted molecular beam epitaxy

Bejtka, K. and Edwards, P.R. and Martin, R.W and Fernández-Garrido, Sergio and Calleja Pardo, Enrique (2008). Composition and luminiscence of AllnGaNAN layers grown by plasma-assisted molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 7); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2993549.

Description

Title: Composition and luminiscence of AllnGaNAN layers grown by plasma-assisted molecular beam epitaxy
Author/s:
  • Bejtka, K.
  • Edwards, P.R.
  • Martin, R.W
  • Fernández-Garrido, Sergio
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: October 2008
Volume: 104
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565–660 °C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%–30% and 0%–16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted

More information

Item ID: 2741
DC Identifier: http://oa.upm.es/2741/
OAI Identifier: oai:oa.upm.es:2741
DOI: 10.1063/1.2993549
Official URL: http://jap.aip.org/japiau/v104/i7
Deposited by: Memoria Investigacion
Deposited on: 29 Mar 2010 08:15
Last Modified: 20 Apr 2016 12:25
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