Ratio-based temperature-sensing technique hardened against nanometer process variations

Ituero Herrero, Pablo and López Vallejo, Marisa (2013). Ratio-based temperature-sensing technique hardened against nanometer process variations. "IEEE Sensors Journal", v. 13 (n. 2); pp. 442-443. ISSN 1530-437X. https://doi.org/10.1109/JSEN.2012.2227713.

Description

Title: Ratio-based temperature-sensing technique hardened against nanometer process variations
Author/s:
  • Ituero Herrero, Pablo
  • López Vallejo, Marisa
Item Type: Article
Título de Revista/Publicación: IEEE Sensors Journal
Date: February 2013
ISSN: 1530-437X
Volume: 13
Subjects:
Freetext Keywords: Leakage, process variations, ratio-based, sensor, temperature, time-to-digital
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This letter presents a temperature-sensing technique on the basis of the temperature dependency of MOSFET leakage currents. To mitigate the effects of process variation, the ratio of two different leakage current measurements is calculated. Simulations show that this ratio is robust to process spread. The resulting sensor is quite small-0.0016 mm2 including an analog-to-digital conversion-and very energy efficient, consuming less than 640 pJ/conversion. After a two-point calibration, the accuracy in a range of 40°C-110°C is less than 1.5°C , which makes the technique suitable for thermal management applications.

More information

Item ID: 29554
DC Identifier: http://oa.upm.es/29554/
OAI Identifier: oai:oa.upm.es:29554
DOI: 10.1109/JSEN.2012.2227713
Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6353878
Deposited by: Memoria Investigacion
Deposited on: 06 Jul 2014 10:26
Last Modified: 21 Apr 2016 23:57
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