New device for continuous-wave THz emission: large area emitter

González Posadas, Vicente and García Muñoz, Luis Enrique and Döhler, Gottfried and Montero de Paz, Javier and Ugarte Muñoz, Eduardo and Rivera Lavado, Alejandro and Preu, Sascha and Malzer, Stefan and Bauerschmidt, Sebastian and Segovia Vargas, Daniel (2013). New device for continuous-wave THz emission: large area emitter. In: "7th European Conference on Antennas and Propagation (EuCAP) : Gothenburg / Sweden 8-12 April 2013", 08/04/2013 - 12/04/2013, Göteborg, Suecia. ISBN 978-1-4673-2187-7. pp. 529-532.

Description

Title: New device for continuous-wave THz emission: large area emitter
Author/s:
  • González Posadas, Vicente
  • García Muñoz, Luis Enrique
  • Döhler, Gottfried
  • Montero de Paz, Javier
  • Ugarte Muñoz, Eduardo
  • Rivera Lavado, Alejandro
  • Preu, Sascha
  • Malzer, Stefan
  • Bauerschmidt, Sebastian
  • Segovia Vargas, Daniel
Item Type: Presentation at Congress or Conference (Article)
Event Title: 7th European Conference on Antennas and Propagation (EuCAP) : Gothenburg / Sweden 8-12 April 2013
Event Dates: 08/04/2013 - 12/04/2013
Event Location: Göteborg, Suecia
Title of Book: 7th European Conference on Antennas and Propagation (EuCAP), 2013
Date: April 2013
ISBN: 978-1-4673-2187-7
Subjects:
Freetext Keywords: High power terahertz, photomixers, planar antennas, terahertz, terahertz arrays
Faculty: E.U.I.T. Telecomunicación (UPM)
Department: Ingeniería Audiovisual y Comunicaciones [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We discuss two different approaches to overcome the power limitations of CW THz generation imposed to conventional photomixers. The increase in power achievable by using arrays of AEs is studied. Then ?large area emitters? are proposed as an alternate approach to overcome the power limitations. In this antenna-free new scheme of photomixing, the THz radiation originates directly from the acceleration of photo-induced charge carriers generated within a large semiconductor area. The quasi-continuous distribution of emitting elements corresponds to a high-density array and results in particularly favorable radiation profiles.

More information

Item ID: 29716
DC Identifier: http://oa.upm.es/29716/
OAI Identifier: oai:oa.upm.es:29716
Official URL: http://www.eucap2013.org/
Deposited by: Memoria Investigacion
Deposited on: 14 Jul 2014 18:19
Last Modified: 22 Apr 2016 00:07
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