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Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires
Cita
Anaya, J., Jiménez, Juan, Rodríguez Domínguez, Andrés 
ORCID: https://orcid.org/0000-0001-8851-1777 and Rodríguez Rodríguez, Tomás ORCID: https://orcid.org/0000-0002-4779-5862
(2014).
Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires.
En: "Symposium L: Photonic an Plasmonic Materials for Enhanced Optoelectronic Performance", 01/12/2013 - 06/06/2014, Boston, Massachusets. pp. 1-6.
https://doi.org/10.1557/opl.2014.250.
ORCID: https://orcid.org/0000-0001-8851-1777 and Rodríguez Rodríguez, Tomás ORCID: https://orcid.org/0000-0002-4779-5862
(2014).
Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires.
En: "Symposium L: Photonic an Plasmonic Materials for Enhanced Optoelectronic Performance", 01/12/2013 - 06/06/2014, Boston, Massachusets. pp. 1-6.
https://doi.org/10.1557/opl.2014.250.
Descripción
| Título: | Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires |
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| Autor/es: |
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| Tipo de Documento: | Ponencia en Congreso o Jornada (Artículo) |
| Título del Evento: | Symposium L: Photonic an Plasmonic Materials for Enhanced Optoelectronic Performance |
| Fechas del Evento: | 01/12/2013 - 06/06/2014 |
| Lugar del Evento: | Boston, Massachusets |
| Título del Libro: | MRS Proceedings |
| Fecha: | 2014 |
| Volumen: | 1627 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Nanostructure; Raman spectroscopy; Si |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Tecnología Electrónica [hasta 2014] |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Raman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtainedRaman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtained
Más información
| ID de Registro: | 29723 |
|---|---|
| Identificador DC: | https://oa.upm.es/29723/ |
| Identificador OAI: | oai:oa.upm.es:29723 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5624020 |
| Identificador DOI: | 10.1557/opl.2014.250 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 19 Jul 2014 08:30 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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