Experimental and numerical study of cw green laser crystallization of a-Si:H thin films

Garcia Garcia, Oscar; Muñoz Martín, David; García-Ballesteros Ramírez, Juan José; Chen, Yu; Morales Furió, Miguel; Carabe, J.; Gandia, J.J. y Molpeceres Álvarez, Carlos Luis (2013). Experimental and numerical study of cw green laser crystallization of a-Si:H thin films. En: "Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference", 12/05/2013 - 16/05/2013, MUNICH. ISBN 978-1-4799-0593-5. p. 1.

Descripción

Título: Experimental and numerical study of cw green laser crystallization of a-Si:H thin films
Autor/es:
  • Garcia Garcia, Oscar
  • Muñoz Martín, David
  • García-Ballesteros Ramírez, Juan José
  • Chen, Yu
  • Morales Furió, Miguel
  • Carabe, J.
  • Gandia, J.J.
  • Molpeceres Álvarez, Carlos Luis
Tipo de Documento: Ponencia en Congreso o Jornada (Póster)
Título del Evento: Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Fechas del Evento: 12/05/2013 - 16/05/2013
Lugar del Evento: MUNICH
Título del Libro: Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Fecha: 2013
ISBN: 978-1-4799-0593-5
Materias:
Palabras Clave Informales: Raman spectra;amorphous state;crystallisation;finite element analysis;heat transfer;heating;hydrogen;laser ablation;laser beam annealing;light sources;measurement by laser beam;melting;nonlinear equations;optical microscopy;scanning electron microscopy;silicon;surface morphology;thin films;vapour deposited coatings;COMSOL Multiphysics;SiH;a-silicon:hydrogen thin films;amorphous silicon thin film heating;confocal laser scanning microscopy;cw green laser crystallization;finite element method;grain growth technique;heat source;laser ablation effects;laser annealing;laser density;laser energy;melting;microRaman spectroscopy;numerical model;physical vapour deposition;polycrystalline silicon;power 15 W;scanning electron microscopy;silicon surface ablation;solar cells;surface morphology;two dimensional nonlinear heat transfer equation;vaporization temperature;Amorphous silicon;Crystallization;Laser theory;Semiconductor lasers;Solids
Escuela: E.T.S.I. Industriales (UPM)
Departamento: Física Aplicada a la Ingeniería Industrial [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Crystallization and grain growth technique of thin film silicon are among the most promising methods for improving efficiency and lowering cost of solar cells. A major advantage of laser crystallization and annealing over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the amorphous silicon thin film, melting it and changing the microstructure to polycrystalline silicon (poly-Si) as it cools. Depending on the laser density, the vaporization temperature can be reached at the center of the irradiated area. In these cases ablation effects are expected and the annealing process becomes ineffective. The heating process in the a-Si thin film is governed by the general heat transfer equation. The two dimensional non-linear heat transfer equation with a moving heat source is solve numerically using the finite element method (FEM), particularly COMSOL Multiphysics. The numerical model help to establish the density and the process speed range needed to assure the melting and crystallization without damage or ablation of the silicon surface. The samples of a-Si obtained by physical vapour deposition were irradiated with a cw-green laser source (Millennia Prime from Newport-Spectra) that delivers up to 15 W of average power. The morphology of the irradiated area was characterized by confocal laser scanning microscopy (Leica DCM3D) and Scanning Electron Microscopy (SEM Hitachi 3000N). The structural properties were studied by micro-Raman spectroscopy (Renishaw, inVia Raman microscope).

Más información

ID de Registro: 30069
Identificador DC: http://oa.upm.es/30069/
Identificador OAI: oai:oa.upm.es:30069
URL Oficial: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6801590&tag=1
Depositado por: Memoria Investigacion
Depositado el: 25 Nov 2014 16:05
Ultima Modificación: 21 Ago 2017 12:06
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