Obtaining an intermediate band photovoltaic material through the Bi insertion in CdTe

Seminóvski Pérez, Yohanna and Palacios Clemente, Pablo and Wahnón Benarroch, Perla (2013). Obtaining an intermediate band photovoltaic material through the Bi insertion in CdTe. "Solar Energy Materials and Solar Cells", v. 114 ; pp. 99-103. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2013.03.002.

Description

Title: Obtaining an intermediate band photovoltaic material through the Bi insertion in CdTe
Author/s:
  • Seminóvski Pérez, Yohanna
  • Palacios Clemente, Pablo
  • Wahnón Benarroch, Perla
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Date: July 2013
ISSN: 0927-0248
Volume: 114
Subjects:
Freetext Keywords: CdTe; Intermediate-band; Solar cell; DFT
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Tecnologías Especiales Aplicadas a la Telecomunicación [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Defect interaction can take place in CdTe under Te and Bi rich conditions. We demonstrate in this work through first principles calculations, that this phenomenon allows a Jahn Teller distortion to form an isolated half-filled intermediate band in the host semiconductor band-gap. This delocalized energy band supports the experimental deep level reported in the host band-gap of CdTe at a low bismuth concentration. Furthermore, the calculated optical absorption of CdTe:Bi in this work shows a significant subband-gap absorption that also supports the enhancement of the optical absorption found in the previous experimental results.

More information

Item ID: 31079
DC Identifier: http://oa.upm.es/31079/
OAI Identifier: oai:oa.upm.es:31079
DOI: 10.1016/j.solmat.2013.03.002
Official URL: http://www.sciencedirect.com/science/article/pii/S0927024813001153
Deposited by: Memoria Investigacion
Deposited on: 21 Oct 2014 17:19
Last Modified: 01 Aug 2015 22:56
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