Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates

Albert, Steven; Bengoechea Encabo, Ana; Barbagini, Francesca; López Romero, David; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Lefebvre, Pierre; Kong, Xiang; Jahn, Uwe; Trampert, Achim; Müller, Marcus; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Petzold, Silke; Christen, Jürgen; Mierry, Philippe de y Zuñiga Pérez, Jesús (2014). Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates. "International Journal of High Speed Electronics and Systems", v. 23 (n. 3-4); pp.. ISSN 1793-6438. https://doi.org/10.1142/S0129156414500207.

Descripción

Título: Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates
Autor/es:
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Barbagini, Francesca
  • López Romero, David
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
  • Lefebvre, Pierre
  • Kong, Xiang
  • Jahn, Uwe
  • Trampert, Achim
  • Müller, Marcus
  • Bertram, Frank
  • Schmidt, Gordon
  • Veit, Peter
  • Petzold, Silke
  • Christen, Jürgen
  • Mierry, Philippe de
  • Zuñiga Pérez, Jesús
Tipo de Documento: Artículo
Título de Revista/Publicación: International Journal of High Speed Electronics and Systems
Fecha: 2014
Volumen: 23
Materias:
Palabras Clave Informales: Selective area growth; nanostructures; InGaN; GaN; LED; photoluminescence; white-light emission; single color emission; core-shell; non-polar; semi-polar; pseudo substrates; coalescence
Escuela: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

[img]
Vista Previa
PDF (Document Portable Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (3MB) | Vista Previa

Resumen

The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.

Más información

ID de Registro: 35714
Identificador DC: http://oa.upm.es/35714/
Identificador OAI: oai:oa.upm.es:35714
Identificador DOI: 10.1142/S0129156414500207
URL Oficial: http://www.worldscientific.com/doi/abs/10.1142/S0129156414500207
Depositado por: Memoria Investigacion
Depositado el: 07 Dic 2015 19:46
Ultima Modificación: 07 Dic 2015 19:46
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • e-ciencia
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM