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Four-injector variability modeling of FinFET predictive technology models
Cita
Royer del Barrio, Pablo, López Vallejo, Marisa, García Redondo, Fernando and López Barrio, Carlos Alberto 
ORCID: https://orcid.org/0000-0002-2423-5272
(2014).
Four-injector variability modeling of FinFET predictive technology models.
En: "5th European Workshop on CMOS Variability (VARI 2014)", 29/09/2014 - 01/10/2014, Palma de Mallorca, Spain. pp. 1-6.
https://doi.org/10.1109/VARI.2014.6957075.
ORCID: https://orcid.org/0000-0002-2423-5272
(2014).
Four-injector variability modeling of FinFET predictive technology models.
En: "5th European Workshop on CMOS Variability (VARI 2014)", 29/09/2014 - 01/10/2014, Palma de Mallorca, Spain. pp. 1-6.
https://doi.org/10.1109/VARI.2014.6957075.
Descripción
| Título: | Four-injector variability modeling of FinFET predictive technology models |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Ponencia en Congreso o Jornada (Artículo) |
| Título del Evento: | 5th European Workshop on CMOS Variability (VARI 2014) |
| Fechas del Evento: | 29/09/2014 - 01/10/2014 |
| Lugar del Evento: | Palma de Mallorca, Spain |
| Título del Libro: | 5th European Workshop on CMOS Variability (VARI 2014) |
| Fecha: | 2014 |
| Materias: | |
| ODS: | |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
The usual way of modeling variability using threshold voltage shift and drain current amplification is becoming inaccurate as new sources of variability appear in sub-22nm devices. In this work we apply the four-injector approach for variability modeling to the simulation of SRAMs with predictive technology models from 20nm down to 7nm nodes. We show that the SRAMs, designed following ITRS roadmap, present stability metrics higher by at least 20% compared to a classical variability modeling approach. Speed estimation is also pessimistic, whereas leakage is underestimated if sub-threshold slope and DIBL mismatch and their correlations with threshold voltage are not considered.
Más información
| ID de Registro: | 36610 |
|---|---|
| Identificador DC: | https://oa.upm.es/36610/ |
| Identificador OAI: | oai:oa.upm.es:36610 |
| Identificador DOI: | 10.1109/VARI.2014.6957075 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 22 Jul 2015 16:52 |
| Ultima Modificación: | 22 Jul 2015 16:52 |
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