Four-injector variability modeling of FinFET predictive technology models

Royer del Barrio, Pablo and López Vallejo, Marisa and García Redondo, Fernando and López Barrio, Carlos Alberto (2014). Four-injector variability modeling of FinFET predictive technology models. In: "5th European Workshop on CMOS Variability (VARI 2014)", 29/09/2014 - 01/10/2014, Palma de Mallorca, Spain. pp. 1-6. https://doi.org/10.1109/VARI.2014.6957075.

Description

Title: Four-injector variability modeling of FinFET predictive technology models
Author/s:
  • Royer del Barrio, Pablo
  • López Vallejo, Marisa
  • García Redondo, Fernando
  • López Barrio, Carlos Alberto
Item Type: Presentation at Congress or Conference (Article)
Event Title: 5th European Workshop on CMOS Variability (VARI 2014)
Event Dates: 29/09/2014 - 01/10/2014
Event Location: Palma de Mallorca, Spain
Title of Book: 5th European Workshop on CMOS Variability (VARI 2014)
Date: 2014
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The usual way of modeling variability using threshold voltage shift and drain current amplification is becoming inaccurate as new sources of variability appear in sub-22nm devices. In this work we apply the four-injector approach for variability modeling to the simulation of SRAMs with predictive technology models from 20nm down to 7nm nodes. We show that the SRAMs, designed following ITRS roadmap, present stability metrics higher by at least 20% compared to a classical variability modeling approach. Speed estimation is also pessimistic, whereas leakage is underestimated if sub-threshold slope and DIBL mismatch and their correlations with threshold voltage are not considered.

More information

Item ID: 36610
DC Identifier: http://oa.upm.es/36610/
OAI Identifier: oai:oa.upm.es:36610
DOI: 10.1109/VARI.2014.6957075
Deposited by: Memoria Investigacion
Deposited on: 22 Jul 2015 16:52
Last Modified: 22 Jul 2015 16:52
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