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Temporally flat top pulse generation from gain switched semiconductor lasers based on a polarization interferometer with variable transfer function
Cita
Consoli Barone, Antonio and Esquivias Moscardo, Ignacio 
ORCID: https://orcid.org/0000-0001-7298-8271
(2014).
Temporally flat top pulse generation from gain switched semiconductor lasers based on a polarization interferometer with variable transfer function.
"Optics Communications", v. 329
;
pp. 214-220.
ISSN 0030-4018.
https://doi.org/10.1016/j.optcom.2014.04.073.
ORCID: https://orcid.org/0000-0001-7298-8271
(2014).
Temporally flat top pulse generation from gain switched semiconductor lasers based on a polarization interferometer with variable transfer function.
"Optics Communications", v. 329
;
pp. 214-220.
ISSN 0030-4018.
https://doi.org/10.1016/j.optcom.2014.04.073.
Descripción
| Título: | Temporally flat top pulse generation from gain switched semiconductor lasers based on a polarization interferometer with variable transfer function |
|---|---|
| Autor/es: |
|
| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Optics Communications |
| Fecha: | Octubre 2014 |
| ISSN: | 0030-4018 |
| Volumen: | 329 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Pulse shaping; Polarization interferometer; Flat top pulses; Gain switched semiconductor lasers; Picosecond phenomena |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Tecnología Fotónica [hasta 2014] |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
We propose the use of a polarization based interferometer with variable transfer function for the generation of temporally flat top pulses from gain switched single mode semiconductor lasers. The main advantage of the presented technique is its flexibility in terms of input pulse characteristics, as pulse duration, spectral bandwidth and operating wavelength. Theoretical predictions and experimental demonstrations are presented and the proposed technique is applied to two different semiconductor laser sources emitting in the 1550 nm region. Flat top pulses are successfully obtained with input seed pulses with duration ranging from 40 ps to 100 ps.
Proyectos asociados
Tipo
Código
Acrónimo
Responsable
Título
Gobierno de España
TEC2012- 38864-C03-02
Sin especificar
Sin especificar
Sin especificar
Más información
| ID de Registro: | 37397 |
|---|---|
| Identificador DC: | https://oa.upm.es/37397/ |
| Identificador OAI: | oai:oa.upm.es:37397 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5490599 |
| Identificador DOI: | 10.1016/j.optcom.2014.04.073 |
| URL Oficial: | http://www.sciencedirect.com/science/article/pii/S... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 07 Sep 2015 18:28 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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