Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

Garcia Tabares Valdivieso, Elisa y Rey-Stolle Prado, Ignacio (2014). Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells. "Solar Energy Materials and Solar Cells", v. 124 ; pp. 17-23. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2014.01.034.

Descripción

Título: Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells
Autor/es:
  • Garcia Tabares Valdivieso, Elisa
  • Rey-Stolle Prado, Ignacio
Tipo de Documento: Artículo
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Fecha: Mayo 2014
Volumen: 124
Materias:
Palabras Clave Informales: III–V on silicon; Minority carrier lifetime; MOVPE; Heteroepitaxy; MJSC; Bottom subcell
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
FP7283798NGCPVUNIVERSIDAD POLITECNICA DE MADRIDA new generation of concentrator photovoltaic cells, modules and systems
Gobierno de EspañaTEC2012-37286Sin especificarSin especificarSin especificar

Más información

ID de Registro: 37478
Identificador DC: http://oa.upm.es/37478/
Identificador OAI: oai:oa.upm.es:37478
Identificador DOI: 10.1016/j.solmat.2014.01.034
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0927024814000531
Depositado por: Memoria Investigacion
Depositado el: 20 Dic 2015 12:47
Ultima Modificación: 01 Jun 2016 22:30
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