Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

Garcia Tabares Valdivieso, Elisa and Rey-Stolle Prado, Ignacio (2014). Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells. "Solar Energy Materials and Solar Cells", v. 124 ; pp. 17-23. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2014.01.034.

Description

Title: Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells
Author/s:
  • Garcia Tabares Valdivieso, Elisa
  • Rey-Stolle Prado, Ignacio
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Date: May 2014
ISSN: 0927-0248
Volume: 124
Subjects:
Freetext Keywords: III–V on silicon; Minority carrier lifetime; MOVPE; Heteroepitaxy; MJSC; Bottom subcell
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7283798NGCPVUNIVERSIDAD POLITECNICA DE MADRIDA new generation of concentrator photovoltaic cells, modules and systems
Government of SpainTEC2012-37286UnspecifiedUnspecifiedUnspecified

More information

Item ID: 37478
DC Identifier: http://oa.upm.es/37478/
OAI Identifier: oai:oa.upm.es:37478
DOI: 10.1016/j.solmat.2014.01.034
Official URL: http://www.sciencedirect.com/science/article/pii/S0927024814000531
Deposited by: Memoria Investigacion
Deposited on: 20 Dec 2015 12:47
Last Modified: 01 Jun 2016 22:30
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