Monolithic master oscillator power amplifier at 1.58 µm for lidar measurements

Vilera Suárez, María Fernanda and Krakowski, M. and Robert, Y. and Vinet, E. and Primiani, P. and Le Goëc, J.P. and Parillaud, O. and van Dijk, F. and García Tijero, José Manuel and Consoli Barone, Antonio and Esquivias Moscardo, Ignacio (2014). Monolithic master oscillator power amplifier at 1.58 µm for lidar measurements. In: "International Conference on Space Optics (ICSO 2014)", 07/10/2014 - 10/10/2014, Tenerife, Canary Islands, Spain. pp. 1-8.

Description

Title: Monolithic master oscillator power amplifier at 1.58 µm for lidar measurements
Author/s:
  • Vilera Suárez, María Fernanda
  • Krakowski, M.
  • Robert, Y.
  • Vinet, E.
  • Primiani, P.
  • Le Goëc, J.P.
  • Parillaud, O.
  • van Dijk, F.
  • García Tijero, José Manuel
  • Consoli Barone, Antonio
  • Esquivias Moscardo, Ignacio
Item Type: Presentation at Congress or Conference (Article)
Event Title: International Conference on Space Optics (ICSO 2014)
Event Dates: 07/10/2014 - 10/10/2014
Event Location: Tenerife, Canary Islands, Spain
Title of Book: International Conference on Space Optics (ICSO 2014)
Date: 2014
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Fotónica y Bioingeniería
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 ?m, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 ?m (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV).

Funding Projects

TypeCodeAcronymLeaderTitle
FP7313200BRITESPACEUNIVERSIDAD POLITECNICA DE MADRIDHigh Brightness Semiconductor Laser Sources for Space Applications in Earth Observation

More information

Item ID: 37487
DC Identifier: http://oa.upm.es/37487/
OAI Identifier: oai:oa.upm.es:37487
Deposited by: Memoria Investigacion
Deposited on: 15 Sep 2015 17:08
Last Modified: 12 May 2020 09:25
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