Study of a-Si crystallization dependence on power and irradiation time using a CW green laser

Morales Furió, Miguel and Muñoz Martín, David and Chen, Yu and Garcia Garcia, Oscar and García-Ballesteros Ramírez, Juan José and Carabe, J. and Gandía, J. J. and Molpeceres Álvarez, Carlos Luis (2014). Study of a-Si crystallization dependence on power and irradiation time using a CW green laser. In: "Laser-based Micro- and Nanoprocessing VIII", March 6, 2014, San Francisco EE.UU.. ISBN 9780819498816. pp. 1-10.

Description

Title: Study of a-Si crystallization dependence on power and irradiation time using a CW green laser
Author/s:
  • Morales Furió, Miguel
  • Muñoz Martín, David
  • Chen, Yu
  • Garcia Garcia, Oscar
  • García-Ballesteros Ramírez, Juan José
  • Carabe, J.
  • Gandía, J. J.
  • Molpeceres Álvarez, Carlos Luis
Item Type: Presentation at Congress or Conference (Article)
Event Title: Laser-based Micro- and Nanoprocessing VIII
Event Dates: March 6, 2014
Event Location: San Francisco EE.UU.
Title of Book: Proc. SPIE 8968, Laser-based Micro- and Nanoprocessing VIII
Date: 25 March 2014
ISBN: 9780819498816
Volume: 8968
Subjects:
Freetext Keywords: amorphous silicon, polycrystalline silicon, crystallization, annealing, laser, simulation
Faculty: E.T.S.I. Industriales (UPM)
Department: Física Aplicada e Ingeniería de Materiales
Creative Commons Licenses: None

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Abstract

An advantage of laser crystallization over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the a-Si thin film to change the microstructure to poly-Si. Thin film samples of a-Si were irradiated with a CW-green laser source. Laser irradiated spots were produced by using different laser powers and irradiation times. These parameters are identified as key variables in the crystallization process. The power threshold for crystallization is reduced as the irradiation time is increased. When this threshold is reached the crystalline fraction increases lineally with power for each irradiation time. The experimental results are analysed with the aid of a numerical thermal model and the presence of two crystallization mechanisms are observed: one due to melting and the other due to solid phase transformation.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainENE2011-23359SIMLASPVUnspecifiedUnspecified
Government of SpainIPT-420000-2010-6INNDISOLUnspecifiedUnspecified
Government of SpainENE2010- 21384-C04-02AMICUnspecifiedUnspecified

More information

Item ID: 37624
DC Identifier: http://oa.upm.es/37624/
OAI Identifier: oai:oa.upm.es:37624
Official URL: http://spie.org/Publications/Proceedings/Volume/8968
Deposited by: Memoria Investigacion
Deposited on: 07 Mar 2016 16:36
Last Modified: 21 Aug 2017 11:51
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