Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

Hofstetter, Jasmin; Cañizo Nadal, Carlos del; Wagner, Hannes; Castellanos, Sergio y Buonassisi, Tonio (2016). Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells. "Progress in Photovoltaics: Research and Applications" ; ISSN 1062-7995.

Descripción

Título: Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells
Autor/es:
  • Hofstetter, Jasmin
  • Cañizo Nadal, Carlos del
  • Wagner, Hannes
  • Castellanos, Sergio
  • Buonassisi, Tonio
Tipo de Documento: Artículo
Título de Revista/Publicación: Progress in Photovoltaics: Research and Applications
Fecha: 2016
Materias:
Palabras Clave Informales: silicon; lifetime; silicon solar cell; crystal and wafer growth techniques; defects
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Grupo Investigación UPM: Silicio y Nuevos Conceptos para Células Solares
Licencias Creative Commons: Ninguna

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Resumen

Silicon wafers comprise approximately 40% of crystalline silicon module cost, and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. To accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.

Más información

ID de Registro: 37803
Identificador DC: http://oa.upm.es/37803/
Identificador OAI: oai:oa.upm.es:37803
Depositado por: Profesor Titular Carlos del Cañizo Nadal
Depositado el: 15 Sep 2015 09:54
Ultima Modificación: 15 Sep 2015 09:54
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