XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire

Gómez Hernández, Víctor Jesús and Gacevic, Zarko and Aseev, Pavel and Soto Rodríguez, Paul and Kumar, Praveen and Calleja Pardo, Enrique and Nötzel, Richard and Sánchez García, Miguel Ángel (2014). XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire. In: "International Workshop on Nitride Semiconductors (IWN2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. p. 1.

Description

Title: XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
Author/s:
  • Gómez Hernández, Víctor Jesús
  • Gacevic, Zarko
  • Aseev, Pavel
  • Soto Rodríguez, Paul
  • Kumar, Praveen
  • Calleja Pardo, Enrique
  • Nötzel, Richard
  • Sánchez García, Miguel Ángel
Item Type: Presentation at Congress or Conference (Poster)
Event Title: International Workshop on Nitride Semiconductors (IWN2014)
Event Dates: 24/08/2014 - 29/08/2014
Event Location: Wroclaw, Poland
Title of Book: International Workshop on Nitride Semiconductors (IWN2014)
Date: 2014
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainMAT2011-26703UnspecifiedUnspecifiedUnspecified

More information

Item ID: 38905
DC Identifier: http://oa.upm.es/38905/
OAI Identifier: oai:oa.upm.es:38905
Deposited by: Memoria Investigacion
Deposited on: 23 Dec 2015 18:51
Last Modified: 06 Jun 2016 18:51
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