Generalized optoelectronic model of series-connected multijunction solar cells

Geisz, John F.; Steiner, Myles A.; García Vara, Iván; France, Ryan M.; Mcmahon, William E.; Osterwald, Carl R. y Friedman, Daniel J. (2015). Generalized optoelectronic model of series-connected multijunction solar cells. "IEEE Journal of Photovoltaics", v. 5 (n. 6); pp. 1827-1839. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2015.2478072.

Descripción

Título: Generalized optoelectronic model of series-connected multijunction solar cells
Autor/es:
  • Geisz, John F.
  • Steiner, Myles A.
  • García Vara, Iván
  • France, Ryan M.
  • Mcmahon, William E.
  • Osterwald, Carl R.
  • Friedman, Daniel J.
Tipo de Documento: Artículo
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Fecha: 2015
Volumen: 5
Materias:
Palabras Clave Informales: Electroluminescence (EL), luminescent coupling (LC), multijunction solar cells, photoluminescence (PL)
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The emission of light from each junction in a series-connected multijunction solar cell both complicates and elucidates the understanding of its performance under arbitrary conditions. Bringing together many recent advances in this understanding, we present a general 1-D model to describe luminescent coupling that arises from both voltage-driven electroluminescence and voltage-independent photoluminescence in nonideal junctions that include effects such as Sah-Noyce-Shockley (SNS) recombination with n ≠ 2, Auger recombination, shunt resistance, reverse-bias breakdown, series resistance, and significant dark area losses. The individual junction voltages and currents are experimentally determined from measured optical and electrical inputs and outputs of the device within the context of the model to fit parameters that describe the devices performance under arbitrary input conditions. Techniques to experimentally fit the model are demonstrated for a four-junction inverted metamorphic solar cell, and the predictions of the model are compared with concentrator flash measurements.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
FP7299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

Más información

ID de Registro: 40482
Identificador DC: http://oa.upm.es/40482/
Identificador OAI: oai:oa.upm.es:40482
Identificador DOI: 10.1109/JPHOTOV.2015.2478072
URL Oficial: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=7287740
Depositado por: Memoria Investigacion
Depositado el: 17 May 2016 18:17
Ultima Modificación: 17 May 2016 18:17
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