Generalized optoelectronic model of series-connected multijunction solar cells

Geisz, John F. and Steiner, Myles A. and García Vara, Iván and France, Ryan M. and Mcmahon, William E. and Osterwald, Carl R. and Friedman, Daniel J. (2015). Generalized optoelectronic model of series-connected multijunction solar cells. "IEEE Journal of Photovoltaics", v. 5 (n. 6); pp. 1827-1839. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2015.2478072.

Description

Title: Generalized optoelectronic model of series-connected multijunction solar cells
Author/s:
  • Geisz, John F.
  • Steiner, Myles A.
  • García Vara, Iván
  • France, Ryan M.
  • Mcmahon, William E.
  • Osterwald, Carl R.
  • Friedman, Daniel J.
Item Type: Article
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Date: 2015
ISSN: 2156-3381
Volume: 5
Subjects:
Freetext Keywords: Electroluminescence (EL), luminescent coupling (LC), multijunction solar cells, photoluminescence (PL)
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The emission of light from each junction in a series-connected multijunction solar cell both complicates and elucidates the understanding of its performance under arbitrary conditions. Bringing together many recent advances in this understanding, we present a general 1-D model to describe luminescent coupling that arises from both voltage-driven electroluminescence and voltage-independent photoluminescence in nonideal junctions that include effects such as Sah-Noyce-Shockley (SNS) recombination with n ≠ 2, Auger recombination, shunt resistance, reverse-bias breakdown, series resistance, and significant dark area losses. The individual junction voltages and currents are experimentally determined from measured optical and electrical inputs and outputs of the device within the context of the model to fit parameters that describe the devices performance under arbitrary input conditions. Techniques to experimentally fit the model are demonstrated for a four-junction inverted metamorphic solar cell, and the predictions of the model are compared with concentrator flash measurements.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

More information

Item ID: 40482
DC Identifier: http://oa.upm.es/40482/
OAI Identifier: oai:oa.upm.es:40482
DOI: 10.1109/JPHOTOV.2015.2478072
Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=7287740
Deposited by: Memoria Investigacion
Deposited on: 17 May 2016 18:17
Last Modified: 17 May 2016 18:17
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