Optimizing phosphorus diffusion for photovoltaic applications: peak doping, inactive phosphorus,gettering, and contact formation

Wagner, Hannes and Dastgheib-Shirazi, Amir and Min, Byungsul and Morishige, Ashley E. and Steyer, Michael and Hahn, Giso and Cañizo Nadal, Carlos del and Buonassisi, Tonio and Altermatt, Pietro P. (2016). Optimizing phosphorus diffusion for photovoltaic applications: peak doping, inactive phosphorus,gettering, and contact formation. "Journal of Applied Physics", v. 119 ; pp. 1-9. ISSN 0021-8979. https://doi.org/10.1063/1.4949326.

Description

Title: Optimizing phosphorus diffusion for photovoltaic applications: peak doping, inactive phosphorus,gettering, and contact formation
Author/s:
  • Wagner, Hannes
  • Dastgheib-Shirazi, Amir
  • Min, Byungsul
  • Morishige, Ashley E.
  • Steyer, Michael
  • Hahn, Giso
  • Cañizo Nadal, Carlos del
  • Buonassisi, Tonio
  • Altermatt, Pietro P.
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: May 2016
ISSN: 0021-8979
Volume: 119
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: None

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Abstract

The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density Npeak = 8.0 × 1018 cm−3 and a junction depth dj = 0.4 μm, resulting in a sheet resistivityρsh = 380 Ω/sq and a saturation current-density J0 below 10 fA/cm2. With these properties, the POCl3 process can compete with ion implantation or doped oxide approaches.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVAntonio Martí VegaMateriales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica

More information

Item ID: 40489
DC Identifier: http://oa.upm.es/40489/
OAI Identifier: oai:oa.upm.es:40489
DOI: 10.1063/1.4949326
Official URL: https://doi.org/10.1063/1.4949326
Deposited by: Profesor Titular Carlos del Cañizo Nadal
Deposited on: 18 May 2016 08:52
Last Modified: 13 Mar 2019 18:52
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