Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells

Espinet González, Pilar and Rey-Stolle Prado, Ignacio and Ochoa Gómez, Mario and Algora del Valle, Carlos and García Vara, Iván and Barrigón Montañés, Enrique (2015). Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells. "Progress in Photovoltaics", v. 23 (n. 7); pp. 874-882. ISSN 1062-7995. https://doi.org/10.1002/pip.2501.

Description

Title: Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells
Author/s:
  • Espinet González, Pilar
  • Rey-Stolle Prado, Ignacio
  • Ochoa Gómez, Mario
  • Algora del Valle, Carlos
  • García Vara, Iván
  • Barrigón Montañés, Enrique
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics
Date: 2015
ISSN: 1062-7995
Volume: 23
Subjects:
Freetext Keywords: Perimeter; recombination; CPV; concentration; multijunction; solar cells; photovoltaics
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This paper studies the recombination at the perimeter in the subcells that constitute a GaInP/GaAs/Ge lattice-matched triple-junction solar cell. For that, diodes of different sizes and consequently different perimeter/area ratios have been manufactured in single-junction solar cells resembling the subcells in a triple-junction solar cell. It has been found that neither in GaInP nor in Ge solar cells the recombination at the perimeter is significant in devices as small as 500 μm × 500μm(2.5 ⋅ 10 − 3 cm2) in GaInP and 250μm  × 250μm (6.25 ⋅ 10 − 4cm2) in Ge. However, in GaAs, the recombination at the perimeter is not negligible at low voltages even in devices as large as 1cm2, and it is the main limiting recombination factor in the open circuit voltage even at high concentrations in solar cells of 250 μm  × 250μm (6.25 ⋅ 10 − 4 cm2) or smaller. Therefore, the recombination at the perimeter in GaAs should be taken into account when optimizing triple-junction solar cells.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7283798NGCPVUNIVERSIDAD POLITECNICA DE MADRIDA new generation of concentrator photovoltaic cells, modules and systems
Madrid Regional GovernmentS2009/ENE1477NUMANCIA-2UnspecifiedUnspecified
Government of SpainIPT-2011-1441-920000UnspecifiedUnspecifiedUnspecified
Government of SpainTEC2012-3728UnspecifiedUnspecifiedUnspecified
Government of SpainTEC2011-28693-C02-01UnspecifiedUnspecifiedUnspecified

More information

Item ID: 40786
DC Identifier: http://oa.upm.es/40786/
OAI Identifier: oai:oa.upm.es:40786
DOI: 10.1002/pip.2501
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pip.2501/abstract
Deposited by: Memoria Investigacion
Deposited on: 06 Jun 2016 18:33
Last Modified: 05 Jun 2019 15:21
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