Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

Soto Rodríguez, Paul and Aseev, Pavel and Gómez Hernández, Víctor Jesús and Ul Hassan Alvi, Naveed and Calleja Pardo, Enrique and Manuel, José M. and Morales Sánchez, Francisco Miguel and Kumar, Praveen and Jiménez, Juan J. and García, Rafael and Senichev, Alexander and Lienau, Christoph and Nötzel, Richard (2015). Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111). "Applied Physics Letters", v. 106 (n. 2); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4905662.

Description

Title: Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)
Author/s:
  • Soto Rodríguez, Paul
  • Aseev, Pavel
  • Gómez Hernández, Víctor Jesús
  • Ul Hassan Alvi, Naveed
  • Calleja Pardo, Enrique
  • Manuel, José M.
  • Morales Sánchez, Francisco Miguel
  • Kumar, Praveen
  • Jiménez, Juan J.
  • García, Rafael
  • Senichev, Alexander
  • Lienau, Christoph
  • Nötzel, Richard
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: February 2015
ISSN: 0003-6951
Volume: 106
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7280879-2CRONOSUnspecifiedTime dynamics and ContROl in naNOStructures for magnetic recording and energy applications

More information

Item ID: 40802
DC Identifier: http://oa.upm.es/40802/
OAI Identifier: oai:oa.upm.es:40802
DOI: 10.1063/1.4905662
Official URL: http://scitation.aip.org/content/aip/journal/apl/106/2/10.1063/1.4905662
Deposited by: Memoria Investigacion
Deposited on: 05 Sep 2016 16:33
Last Modified: 05 Jun 2019 15:24
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