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Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)
Cita
Soto Rodríguez, Paul; Aseev, Pavel; Gómez Hernández, Víctor Jesús; Ul Hassan Alvi, Naveed; Calleja Pardo, Enrique; Manuel, José M.; Morales Sánchez, Francisco Miguel; Kumar, Praveen; Jiménez, Juan J.; García, Rafael; Senichev, Alexander; Lienau, Christoph y Nötzel, Richard (2015). Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111). "Applied Physics Letters", v. 106 (n. 2); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4905662.
Descripción
| Título: | Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111) |
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| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Applied Physics Letters |
| Fecha: | Febrero 2015 |
| Volumen: | 106 |
| Materias: | |
| Escuela: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Departamento: | Otro |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.
Proyectos asociados
| Tipo | Código | Acrónimo | Responsable | Título |
|---|---|---|---|---|
| FP7 | 280879-2 | CRONOS | Sin especificar | Sin especificar |
Más información
| ID de Registro: | 40802 |
|---|---|
| Identificador DC: | http://oa.upm.es/40802/ |
| Identificador OAI: | oai:oa.upm.es:40802 |
| Identificador DOI: | 10.1063/1.4905662 |
| URL Oficial: | http://scitation.aip.org/content/aip/journal/apl/106/2/10.1063/1.4905662 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 05 Sep 2016 16:33 |
| Ultima Modificación: | 05 Sep 2016 16:33 |
