Implications of low breakdown voltage of component subcells on external quantum efficiency measurements of multijunction solar cells

Barrigón Montañés, Enrique and Espinet González, Pilar and Contreras, Yedileth and Rey-Stolle Prado, Ignacio (2015). Implications of low breakdown voltage of component subcells on external quantum efficiency measurements of multijunction solar cells. "Progress in Photovoltaics", v. 23 (n. 11); pp. 1597-1607. ISSN 1062-7995. https://doi.org/10.1002/pip.2597.

Description

Title: Implications of low breakdown voltage of component subcells on external quantum efficiency measurements of multijunction solar cells
Author/s:
  • Barrigón Montañés, Enrique
  • Espinet González, Pilar
  • Contreras, Yedileth
  • Rey-Stolle Prado, Ignacio
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics
Date: November 2015
ISSN: 1062-7995
Volume: 23
Subjects:
Freetext Keywords: Ge subcell; breakdown voltage; external quantum efficiency; multijunction solar cells
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The electrical and optical coupling between subcells in a multijunction solar cell affects its external quantum efficiency (EQE) measurement. In this study, we show how a low breakdown voltage of a component subcell impacts the EQE determination of a multijunction solar cell and demands the use of a finely adjusted external voltage bias. The optimum voltage bias for the EQE measurement of a Ge subcell in two different GaInP/GaInAs/Ge triple-junction solar cells is determined both by sweeping the external voltage bias and by tracing the I–V curve under the same light bias conditions applied during the EQE measurement. It is shown that the I–V curve gives rapid and valuable information about the adequate light and voltage bias needed, and also helps to detect problems associated with non-ideal I–V curves that might affect the EQE measurement. The results also show that, if a non-optimum voltage bias is applied, a measurement artifact can result. Only when the problems associated with a non-ideal I–V curve and/or a low breakdown voltage have been discarded, the measurement artifacts, if any, can be attributed to other effects such as luminescent coupling between subcells.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainIPT-2011-1441-920000SIGMAPLANTASAbengoa Solar New Technologies S.ALa Innovación en las Plantas y Modelos de Sistemas de Concentración Fotovoltaica en España”
Government of SpainTEC2011-28639-C02-01UnspecifiedUnspecifiedCélulas solares para alta concentración con eficiencias superiores al 40%
Government of SpainTEC2012-37286UnspecifiedUnspecifiedFabricación por MOVPE de células solares multiunion de. Semiconductores III-V sobre silicio
Government of SpainIPT-2011-1408-420000ENERGRAPGraphenea S.A.Grapheno en Aplicaciones de Energía
Madrid Regional GovernmentS2009/ENE1477NUMANCIA IIUnspecifiedUnspecified

More information

Item ID: 40866
DC Identifier: http://oa.upm.es/40866/
OAI Identifier: oai:oa.upm.es:40866
DOI: 10.1002/pip.2597
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pip.2597/abstract;jsessionid=EDED821223570CC20693BD6458752306.f02t02
Deposited by: Memoria Investigacion
Deposited on: 07 Sep 2016 18:01
Last Modified: 05 Jun 2019 16:30
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