Quadruple-junction inverted metamorphic concentrator devices

France, Ryan M.; Geisz, John F.; García Vara, Iván; Steiner, Myles A.; McMahon, William E.; Friedman, Daniel J.; Moriarty, Tom E.; Osterwald, Carl R.; Ward, J. Scott; Duda, Anna; Young, Michelle y Olavarria, Waldo J. (2015). Quadruple-junction inverted metamorphic concentrator devices. "IEEE Journal of Photovoltaics", v. 5 (n. 1); pp. 432-437. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2014.2364132.

Descripción

Título: Quadruple-junction inverted metamorphic concentrator devices
Autor/es:
  • France, Ryan M.
  • Geisz, John F.
  • García Vara, Iván
  • Steiner, Myles A.
  • McMahon, William E.
  • Friedman, Daniel J.
  • Moriarty, Tom E.
  • Osterwald, Carl R.
  • Ward, J. Scott
  • Duda, Anna
  • Young, Michelle
  • Olavarria, Waldo J.
Tipo de Documento: Artículo
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Fecha: 2015
Volumen: 5
Materias:
Palabras Clave Informales: Metamorphic, multijunction, III–V
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

We present results for quadruple-junction inverted metamorphic (4J-IMM) devices under the concentrated direct spectrum and analyze the present limitations to performance. The devices integrate lattice-matched subcells with rear heterojunctions, as well as lattice-mismatched subcells with low threading dislocation density. To interconnect the subcells, thermally stable lattice-matched tunnel junctions are used, as well as a metamorphic GaAsSb/GaInAs tunnel junction between the lattice-mismatched subcells. A broadband antireflection coating is used, as well as a front metal grid designed for high concentration operation. The best device has a peak efficiency of (43.8 &#x00B1; 2.2)% at 327-sun concentration, as measured with a spectrally adjustable flash simulator, and maintains an efficiency of (42.9 &#x00B1; 2.1)% at 869 suns, which is the highest concentration measured. The V<sub>oc</sub> increases from 3.445 V at 1-sun to 4.10 V at 327-sun concentration, which indicates high material quality in all of the subcells. The subcell voltages are analyzed using optical modeling, and the present device limitations and pathways to improvement are discussed. Although further improvements are possible, the 4J-IMM structure is clearly capable of very high efficiency at concentration, despite the complications arising from utilizing lattice-mismatched subcells.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
FP7299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

Más información

ID de Registro: 40903
Identificador DC: http://oa.upm.es/40903/
Identificador OAI: oai:oa.upm.es:40903
Identificador DOI: 10.1109/JPHOTOV.2014.2364132
URL Oficial: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6945794
Depositado por: Memoria Investigacion
Depositado el: 14 Jun 2016 16:11
Ultima Modificación: 14 Jun 2016 16:11
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