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Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)
Cita
Soto Rodriguez, Paul Eduardo David, Calderón Nash, Verónica, Aseev, Pavel, Gómez Hernández, Victor Jesús, Kumar, Praveen, Ul Hassan Alvi, Naveed, Sánchez, Alfredo, Villalonga, Reynaldo, Pingarrón, José M. and Nöetzel, Richard
(2015).
Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111).
"Electrochemistry Communications", v. 60
;
pp. 158-162.
ISSN 1388-2481.
https://doi.org/10.1016/j.elecom.2015.09.003.
Descripción
| Título: | Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111) |
|---|---|
| Autor/es: |
|
| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Electrochemistry Communications |
| Fecha: | Noviembre 2015 |
| ISSN: | 1388-2481 |
| Volumen: | 60 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | InGaN; InN; Quantum dots; Nanocolumns; Nanowall network; Cyclic voltammetry |
| Escuela: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Departamento: | Otro |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Pronounced electrocatalytic oxidation enhancement at the surface of InGaN layers and nanostructures directly grown on Si by plasma-assisted molecular beam epitaxy is demonstrated. The oxidation enhancement, probed with the ferro/ferricyanide redox couple increases with In content and proximity of nanostructure surfaces and sidewalls to the c-plane. This is attributed to the corresponding increase of the density of intrinsic positively charged surface donors promoting electron transfer. Strongest enhancement is for c-plane InGaN layers functionalized with InN quantum dots (QDs). These results explain the excellent performance of our InN/InGaN QD biosensors and water splitting electrodes for further boosting efficiency.
Proyectos asociados
Tipo
Código
Acrónimo
Responsable
Título
Gobierno de España
CTQ2014-58989-P
Sin especificar
Sin especificar
Sin especificar
Más información
| ID de Registro: | 40907 |
|---|---|
| Identificador DC: | https://oa.upm.es/40907/ |
| Identificador OAI: | oai:oa.upm.es:40907 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5492439 |
| Identificador DOI: | 10.1016/j.elecom.2015.09.003 |
| URL Oficial: | http://www.sciencedirect.com/science/article/pii/S... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 07 Sep 2016 16:34 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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