Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)

Soto Rodriguez, Paul Eduardo David and Calderón Nash, Verónica and Aseev, Pavel and Gómez Hernández, Victor Jesús and Kumar, Praveen and Ul Hassan Alvi, Naveed and Sánchez, Alfredo and Villalonga, Reynaldo and Pingarrón, José M. and Nöetzel, Richard (2015). Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111). "Electrochemistry Communications", v. 60 ; pp. 158-162. ISSN 1388-2481. https://doi.org/10.1016/j.elecom.2015.09.003.

Description

Title: Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)
Author/s:
  • Soto Rodriguez, Paul Eduardo David
  • Calderón Nash, Verónica
  • Aseev, Pavel
  • Gómez Hernández, Victor Jesús
  • Kumar, Praveen
  • Ul Hassan Alvi, Naveed
  • Sánchez, Alfredo
  • Villalonga, Reynaldo
  • Pingarrón, José M.
  • Nöetzel, Richard
Item Type: Article
Título de Revista/Publicación: Electrochemistry Communications
Date: November 2015
ISSN: 1388-2481
Volume: 60
Subjects:
Freetext Keywords: InGaN; InN; Quantum dots; Nanocolumns; Nanowall network; Cyclic voltammetry
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Pronounced electrocatalytic oxidation enhancement at the surface of InGaN layers and nanostructures directly grown on Si by plasma-assisted molecular beam epitaxy is demonstrated. The oxidation enhancement, probed with the ferro/ferricyanide redox couple increases with In content and proximity of nanostructure surfaces and sidewalls to the c-plane. This is attributed to the corresponding increase of the density of intrinsic positively charged surface donors promoting electron transfer. Strongest enhancement is for c-plane InGaN layers functionalized with InN quantum dots (QDs). These results explain the excellent performance of our InN/InGaN QD biosensors and water splitting electrodes for further boosting efficiency.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainCTQ2014-58989-PUnspecifiedUnspecifiedUnspecified

More information

Item ID: 40907
DC Identifier: http://oa.upm.es/40907/
OAI Identifier: oai:oa.upm.es:40907
DOI: 10.1016/j.elecom.2015.09.003
Official URL: http://www.sciencedirect.com/science/article/pii/S1388248115002477
Deposited by: Memoria Investigacion
Deposited on: 07 Sep 2016 16:34
Last Modified: 05 Jun 2019 17:14
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