All-semiconductor master oscillator power amplifier at 1.5 um for high power applications

Faugeron, M. and Krakowski, M. and Robert, Y. and Vinet, E. and Primiani, P. and Le Goëc, J.P. and Parillaud, O. and Vilera, M. and Pérez Serrano, Antonio and Garcia Tijero, Jose Manuel and Esquivias Moscardo, Ignacio and van Dijk, F. (2015). All-semiconductor master oscillator power amplifier at 1.5 um for high power applications. In: "Conference on Lasers and Electro-Optics/International Quantum Electronics Conference (CLEO 2015)", 21/06/2015 - 25/06/2015, Munich, Germany. pp..

Description

Title: All-semiconductor master oscillator power amplifier at 1.5 um for high power applications
Author/s:
  • Faugeron, M.
  • Krakowski, M.
  • Robert, Y.
  • Vinet, E.
  • Primiani, P.
  • Le Goëc, J.P.
  • Parillaud, O.
  • Vilera, M.
  • Pérez Serrano, Antonio
  • Garcia Tijero, Jose Manuel
  • Esquivias Moscardo, Ignacio
  • van Dijk, F.
Item Type: Presentation at Congress or Conference (Article)
Event Title: Conference on Lasers and Electro-Optics/International Quantum Electronics Conference (CLEO 2015)
Event Dates: 21/06/2015 - 25/06/2015
Event Location: Munich, Germany
Title of Book: Conference on Lasers and Electro-Optics/International Quantum Electronics Conference (CLEO 2015)
Date: 2015
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

High power (> 0.5 W) single-mode frequency laser at 1.55 μm are nowadays key components for a large number of applications such as lidar systems, telemetry or free-space communications. For this level of power, the most suitable and available sources are solid-state lasers and fiber lasers. Semiconductor devices, which are more compact and more efficient, have still to demonstrate very high power operation to be a credible competitor. In order to obtain these levels of power with semiconductor devices, the more suitable device seems to be the Master Oscillator Power Amplifier (MOPA). Single-mode emission is generated by a Distributed Feedback laser (DFB) and the signal is then amplified with a Power Amplifier (PA). To avoid complex optical coupling and to simplify the packaging, it is possible to integrate on the same chip the laser and the amplifier. The main challenges are the fabrication of the multi-section device (at least 2 sections: one for the laser and one for the amplifier) and the reduction of the reflections. Indeed the facet and the internal reflections can create multiple cavities behavior and disturb the laser single-mode emission. In this contribution, we report the realization of a 3-section monolithic MOPA on InP.

More information

Item ID: 42575
DC Identifier: http://oa.upm.es/42575/
OAI Identifier: oai:oa.upm.es:42575
Deposited by: Memoria Investigacion
Deposited on: 03 Sep 2016 07:29
Last Modified: 03 Sep 2016 07:29
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