Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Olea Ariza, Javier and López Estrada, Esther and Antolín Fernández, Elisa and Martí Vega, Antonio and Luque López, Antonio and García-Hemme, E. and Pastor Pastor, David and García-Hernansanz, R. and Prado, Agustín del and González-Díaz, G. (2016). Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap. "Journal of Physics D: Applied Physics", v. 49 (n. 5); pp.. ISSN 0022-3727. https://doi.org/10.1088/0022-3727/49/5/055103.

Description

Title: Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap
Author/s:
  • Olea Ariza, Javier
  • López Estrada, Esther
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • Luque López, Antonio
  • García-Hemme, E.
  • Pastor Pastor, David
  • García-Hernansanz, R.
  • Prado, Agustín del
  • González-Díaz, G.
Item Type: Article
Título de Revista/Publicación: Journal of Physics D: Applied Physics
Date: January 2016
ISSN: 0022-3727
Volume: 49
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15-300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVAntonio Martí VegaMateriales, dispositivos y tecnología para el desarrollo de la Industria fotovoltaica
Government of SpainTEC2013-41730-RUnspecifiedUniversidad Politécnica de MadridFabricación de dispositivos detectores de infrarrojo próximo mediante si supersaturado con metales de transición
Government of SpainJCI-2011-10402UnspecifiedUnspecifiedUnspecified
Government of SpainEX-2010-0662UnspecifiedUnspecifiedUnspecified

More information

Item ID: 43511
DC Identifier: http://oa.upm.es/43511/
OAI Identifier: oai:oa.upm.es:43511
DOI: 10.1088/0022-3727/49/5/055103
Official URL: https://iopscience.iop.org/article/10.1088/0022-3727/49/5/055103/meta
Deposited by: Prof. Antonio Martí Vega
Deposited on: 07 Oct 2016 12:26
Last Modified: 05 Jun 2019 11:18
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