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Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap
Citation
Olea Ariza, Javier and López Estrada, Esther and Antolín Fernández, Elisa and Martí Vega, Antonio and Luque López, Antonio and García-Hemme, E. and Pastor Pastor, David and García-Hernansanz, R. and Prado, Agustín del and González-Díaz, G. (2016). Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap. "Journal of Physics D: Applied Physics", v. 49 (n. 5); pp.. ISSN 0022-3727. https://doi.org/10.1088/0022-3727/49/5/055103.
Description
| Title: | Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Journal of Physics D: Applied Physics |
| Date: | January 2016 |
| ISSN: | 0022-3727 |
| Volume: | 49 |
| Subjects: | |
| Faculty: | Instituto de Energía Solar (IES) (UPM) |
| Department: | Electrónica Física |
| UPM's Research Group: | Silicio y Nuevos Conceptos para Células Solares |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15-300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.
Funding Projects
| Type | Code | Acronym | Leader | Title |
|---|---|---|---|---|
| Madrid Regional Government | S2013/MAE-2780 | MADRID-PV | Antonio Martí Vega | Materiales, dispositivos y tecnología para el desarrollo de la Industria fotovoltaica |
| Government of Spain | TEC2013-41730-R | Unspecified | Universidad Politécnica de Madrid | Fabricación de dispositivos detectores de infrarrojo próximo mediante si supersaturado con metales de transición |
| Government of Spain | JCI-2011-10402 | Unspecified | Unspecified | Unspecified |
| Government of Spain | EX-2010-0662 | Unspecified | Unspecified | Unspecified |
More information
| Item ID: | 43511 |
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| DC Identifier: | http://oa.upm.es/43511/ |
| OAI Identifier: | oai:oa.upm.es:43511 |
| DOI: | 10.1088/0022-3727/49/5/055103 |
| Official URL: | https://iopscience.iop.org/article/10.1088/0022-3727/49/5/055103/meta |
| Deposited by: | Prof. Antonio Martí Vega |
| Deposited on: | 07 Oct 2016 12:26 |
| Last Modified: | 05 Jun 2019 11:18 |
