InxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications

Aseev, Pavel (2016). InxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications. Thesis (Doctoral), E.T.S.I. Telecomunicación (UPM). https://doi.org/10.20868/UPM.thesis.44615.

Description

Title: InxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications
Author/s:
  • Aseev, Pavel
Contributor/s:
  • Calleja Pardo, Enrique
  • Gačević, Zarko
Item Type: Thesis (Doctoral)
Date: 2016
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

During this work the constituent functional blocks of a InGaN/Si-based solar-assisted water splitting cell were obtained by molecular beam epitaxy, which includes: - Compact and chemically homogeneous InGaN layers were grown directly on Si substrates over the entire composition range. Such InGaN layers with the InN mole fraction above 30% grown directly on Si are demonstrated for the first time. - InN quantum dots were grown on Si(111), Si(001) and InGaN(0001)/Si(111) substrates by near room temperature droplet epitaxy method. - Selective area grown GaN nanowires with well controlled geometry and structural/optical quality were fabricated by selective area growth method on different quality templates. A dislocation filtering effect was studied in detail. All grown samples were extensively characterized by large variety of tools to confirm their high quality. The photoelectrochemical performance of InGaN-on-Si layers was evaluated and ways to enhance it were proposed, such as improving its stability via NiO protection layers and boosting their performance by InN quantum dots decoration. Overall, despite many challenges, it was demonstrated that InGaN is a very promising material for realization of tandem (with Si cells) water splitting cells. RESUMEN Durante este trabajo se obtuvieron los bloques funcionales constitutivos de una célula para la disociación de agua mediante energía solar basada en heteroestructuras de InGaN/Si crecidas por epitaxia de haces moleculares, que incluye: - Crecimiento de capas de InGaN compactas y químicamente homogéneas directamente sobre sustratos de Si cubriendo todo el rango de composiciones. Se ha demostrado por vez primera el crecimiento de capas de InGaN con fracciones molares de InN superiores al 30% y crecidas directamente sobre Si. - Crecimiento de puntos cuánticos de InN sobre sustratos de Si(111), Si(001) e InGaN(0001)/Si(111) mediante epitaxia sobre gotas a temperaturas cercanas a la ambiente. - Crecimiento de nanocolumnas de GaN con control de su geometría y elevada calidad cristalina y estructural mediante crecimiento localizado y selectivo utilizando diferentes substratos. Estudio en detalle del efecto de filtrado de dislocaciones. Todas las muestras crecidas se caracterizaron extensamente mediante una gran variedad de herramientas para confirmar su elevada calidad. Se evaluó el rendimiento fotoelectroquímico de capas de InGaN sobre Si y se han propuesto modos de mejorarlo, tales como aumentar su estabilidad con capas de protección de NiO y mediante la decoración con puntos cuánticos de InN. En general, a pesar de los muchos desafíos, se ha demostrado que las aleaciones de InGaN constituyen un sistema material muy prometedor para la realización de células tándem (junto con células Si) para la disociación de agua.

More information

Item ID: 44615
DC Identifier: http://oa.upm.es/44615/
OAI Identifier: oai:oa.upm.es:44615
DOI: 10.20868/UPM.thesis.44615
Deposited by: Archivo Digital UPM 2
Deposited on: 07 Feb 2017 07:34
Last Modified: 06 Aug 2017 22:30
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