Refractive indexes and extinction coefficients of n- and p-type doped GalnP, AllnP and AlGalnP for multijunction solar cells

Ochoa Martínez, Efraín and Barrutia Poncela, Laura and Ochoa Gómez, Mario and Barrigón Montañés, Enrique and García Vara, Iván and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and Basa, Peter and Kronome, Gergely and Gabás, Mercedes (2017). Refractive indexes and extinction coefficients of n- and p-type doped GalnP, AllnP and AlGalnP for multijunction solar cells. "Solar Energy Materials And Solar Cells", v. 174 ; pp. 388-396. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2017.09.028.

Description

Title: Refractive indexes and extinction coefficients of n- and p-type doped GalnP, AllnP and AlGalnP for multijunction solar cells
Author/s:
  • Ochoa Martínez, Efraín
  • Barrutia Poncela, Laura
  • Ochoa Gómez, Mario
  • Barrigón Montañés, Enrique
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Basa, Peter
  • Kronome, Gergely
  • Gabás, Mercedes
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials And Solar Cells
Date: September 2017
ISSN: 0927-0248
Volume: 174
Subjects:
Freetext Keywords: III-V semiconductor layers; Multijunction solar cells; Spectroscopic ellipsometry; Order parameter; Doped-GaInP (-AlInP, -AlGaInP)
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The optical properties of p-type, n-type and nominally undoped (AlxGa1_x)yIn1_yP layers have been determined in a wide spectral range. The layers under study have been chosen with compositions and dopant concentrations which make them interesting for their use in III-V multijunction solar cells. The layers have been measured by variable angle spectroscopic ellipsometry and, irrespective of composition and doping, their optical response has been modelled using the same model dielectric function consisting of two asymmetric Tauc-Lorentz oscillators and a 3D-M0 Adachi term. The results show that transition energy values change with layer composition, whilst for layers of the same material (i.e. GaInP or AlInP), the band-gap transition energy E0 shows a strong dependence on the order parameter. The refractive indexes and extinction coefficients deduced from the ellipsometric data have been used to fit reflectance measurements for the same layers and an excellent agreement has been achieved, thus validating the model dielectric function proposed for this kind of materials.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2014-54260-C3-1-PMINECOUnspecifiedUnspecified
Government of SpainTEC2014-54260-C3-3-PMINECOUnspecifiedUnspecified
Government of SpainPCIN- 2015-181-C02-01MINECOUnspecifiedUnspecified
Government of SpainPCIN-2015-181-C02-02MINECOUnspecifiedUnspecified
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedUnspecified

More information

Item ID: 53480
DC Identifier: http://oa.upm.es/53480/
OAI Identifier: oai:oa.upm.es:53480
DOI: 10.1016/j.solmat.2017.09.028
Official URL: https://www.sciencedirect.com/science/article/pii/S0927024817305172?via%3Dihub
Deposited by: Memoria Investigacion
Deposited on: 26 Mar 2019 17:32
Last Modified: 01 Oct 2019 22:30
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