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Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques
Cita
López Escalante, María Cruz, Sciana, B., Dawidowski, W., Bielak, K. and Gabás Pérez, María Mercedes 
ORCID: https://orcid.org/0000-0002-9626-6131
(2018).
Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques.
"Applied Surface Science", v. 433
;
pp. 1-9.
ISSN 0169-4332.
https://doi.org/10.1016/j.apsusc.2017.10.032.
ORCID: https://orcid.org/0000-0002-9626-6131
(2018).
Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques.
"Applied Surface Science", v. 433
;
pp. 1-9.
ISSN 0169-4332.
https://doi.org/10.1016/j.apsusc.2017.10.032.
Descripción
| Título: | Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Applied Surface Science |
| Fecha: | Marzo 2018 |
| ISSN: | 0169-4332 |
| Volumen: | 433 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | III–V semiconductors; Dilute nitrides; N-bonding configuration; N-related defects; (AP)-MOVPE; ARXPS |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
This work presents the results of X-ray photoelectron spectroscopy studies on the bonding N configuration in InGaAsN epilayers grown by atmospheric pressure metal organic vapour phase epitaxy. Growth temperature has been tuned in order to obtain both, relaxed and strained layers. The studies were concentrated on analysing the influence of the growth temperature, post growth thermal annealing process and surface quality on the formation of Ga-N and In-N bonds as well as N-related defects. The contamination of InGaAsN films by growth precursor residues and oxides has also been addressed. The growth temperature stands out as a decisive factor boosting In-N bonds ormation, while the thermal annealing seems to affect the N-related defects density in the layers.
Proyectos asociados
Tipo
Código
Acrónimo
Responsable
Título
Gobierno de España
TEC2014-54260-C3-3-P
Sin especificar
Sin especificar
Sin especificar
Gobierno de España
PCIN2015-0181-C02-01
Sin especificar
Sin especificar
Sin especificar
Más información
| ID de Registro: | 55075 |
|---|---|
| Identificador DC: | https://oa.upm.es/55075/ |
| Identificador OAI: | oai:oa.upm.es:55075 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/6246674 |
| Identificador DOI: | 10.1016/j.apsusc.2017.10.032 |
| URL Oficial: | https://www.sciencedirect.com/science/article/pii/... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 29 May 2019 16:21 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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