Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques

López Escalante, María Cruz and Sciana, B. and Dawidowski, W. and Bielak, K. and Gabás Pérez, María Mercedes (2018). Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques. "Applied Surface Science", v. 433 ; pp. 1-9. ISSN 0169-4332. https://doi.org/10.1016/j.apsusc.2017.10.032.

Description

Title: Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques
Author/s:
  • López Escalante, María Cruz
  • Sciana, B.
  • Dawidowski, W.
  • Bielak, K.
  • Gabás Pérez, María Mercedes
Item Type: Article
Título de Revista/Publicación: Applied Surface Science
Date: March 2018
ISSN: 0169-4332
Volume: 433
Subjects:
Freetext Keywords: III–V semiconductors; Dilute nitrides; N-bonding configuration; N-related defects; (AP)-MOVPE; ARXPS
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This work presents the results of X-ray photoelectron spectroscopy studies on the bonding N configuration in InGaAsN epilayers grown by atmospheric pressure metal organic vapour phase epitaxy. Growth temperature has been tuned in order to obtain both, relaxed and strained layers. The studies were concentrated on analysing the influence of the growth temperature, post growth thermal annealing process and surface quality on the formation of Ga-N and In-N bonds as well as N-related defects. The contamination of InGaAsN films by growth precursor residues and oxides has also been addressed. The growth temperature stands out as a decisive factor boosting In-N bonds ormation, while the thermal annealing seems to affect the N-related defects density in the layers.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2014-54260-C3-3-PUnspecifiedUnspecifiedUnspecified
Government of SpainPCIN2015-0181-C02-01UnspecifiedUnspecifiedUnspecified

More information

Item ID: 55075
DC Identifier: http://oa.upm.es/55075/
OAI Identifier: oai:oa.upm.es:55075
DOI: 10.1016/j.apsusc.2017.10.032
Official URL: https://www.sciencedirect.com/science/article/pii/S0169433217329550?via%3Dihub
Deposited by: Memoria Investigacion
Deposited on: 29 May 2019 16:21
Last Modified: 01 Apr 2020 22:30
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