V-doped SnS2: a new intermediate band material for a better use of the solar spectrum

Wahnón Benarroch, Perla and Conesa Cegarra, José Carlos and Palacios Clemente, Pablo and Lucena García, Raquel and Aguilera Bonet, Irene and Seminovski Pérez, Yohanna and Fresno García, Fernando (2011). V-doped SnS2: a new intermediate band material for a better use of the solar spectrum. "Physical Chemistry Chemical Physics" (n. 13); pp. 20401-20407. ISSN 1463-9076. https://doi.org/10.1039/c1cp22664a.

Description

Title: V-doped SnS2: a new intermediate band material for a better use of the solar spectrum
Author/s:
  • Wahnón Benarroch, Perla
  • Conesa Cegarra, José Carlos
  • Palacios Clemente, Pablo
  • Lucena García, Raquel
  • Aguilera Bonet, Irene
  • Seminovski Pérez, Yohanna
  • Fresno García, Fernando
Item Type: Article
Título de Revista/Publicación: Physical Chemistry Chemical Physics
Date: 2011
ISSN: 1463-9076
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Intermediate band materials can boost photovoltaic efficiency through an increase in photocurrent without photovoltage degradation thanks to the use of two sub-bandgap photons to achieve a full electronic transition from the valence band to the conduction band of a semiconductor structure. After having reported in previous works several transition metal-substituted semiconductors as able to achieve the electronic structure needed for this scheme, we propose at present carrying out this substitution in sulfides that have bandgaps of around 2.0 eV and containing octahedrally coordinated cations such as In or Sn. Specifically, the electronic structure of layered SnS2 with Sn partially substituted by vanadium is examined here with first principles quantum methods and seen to give favourable characteristics in this respect. The synthesis of this material in nanocrystalline powder form is then undertaken and achieved using solvothermal chemical methods. The insertion of vanadium in SnS2 is found to produce an absorption spectrum in the UV-Vis-NIR range that displays a new sub-bandgap feature in agreement with the quantum calculations. A photocatalytic reaction-based test verifies that this sub-bandgap absorption produces highly mobile electrons and holes in the material that may be used for the solar energy conversion, giving experimental support to the quantum calculations predictions.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainCSD2006-0004GENESIS FVUnspecifiedUnspecified
Government of SpainMAT2009-14625- C03FOTOMATUnspecifiedUnspecified
Madrid Regional GovernmentS2009ENE-1477NUMANCIA 2UnspecifiedUnspecified

More information

Item ID: 62351
DC Identifier: http://oa.upm.es/62351/
OAI Identifier: oai:oa.upm.es:62351
DOI: 10.1039/c1cp22664a
Official URL: https://pubs.rsc.org/en/content/articlelanding/2011/CP/c1cp22664a#!divAbstract
Deposited by: Biblioteca ETSI Telecomunicación
Deposited on: 25 Mar 2020 07:18
Last Modified: 25 Mar 2020 07:19
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