Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Veinberg Vidal, Elias and Vauche, Laura and Medjoubi, Karim and Weick, Clément and Besançon, Claire and García-Linares Fontes, Pablo and Datas Medina, Alejandro and Kaminski-Cachopo, Anne and Voarino, Philippe and Mur, Pierre and Decobert, Jean and Dupré, Cecilia (2019). Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration. "Progress in Photovoltaics", v. 27 (n. 7); pp. 652-661. ISSN 1099-159X. https://doi.org/10.1002/pip.3128.

Description

Title: Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration
Author/s:
  • Veinberg Vidal, Elias
  • Vauche, Laura
  • Medjoubi, Karim
  • Weick, Clément
  • Besançon, Claire
  • García-Linares Fontes, Pablo
  • Datas Medina, Alejandro
  • Kaminski-Cachopo, Anne
  • Voarino, Philippe
  • Mur, Pierre
  • Decobert, Jean
  • Dupré, Cecilia
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics
Date: July 2019
ISSN: 1099-159X
Volume: 27
Subjects:
Freetext Keywords: Component cells; III‐V on silicon tandem solar cells; Isotypes; I‐V characterization; Low concentration photovoltaics (LCPV); Multijunction; Pulsed multiflash solar simulator
Faculty: E.T.S.I. Diseño Industrial (UPM)
Department: Ingeniería Eléctrica, Electrónica Automática y Física Aplicada
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga₀.₅In₀.₅P emitter and a p‐Al₀.₂Ga₀.₈As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which to our knowledge is the best dual‐junction two‐terminal III‐V on Si tandem cell efficiency reported to date under verified reference conditions. The I‐V characterization of these 1‐cm² tandem cells under concentration required the development of a new method using a single‐source multiflash solar simulator and not perfectly matched component cells, also known as pseudo‐isotypes, formed by Si single‐junction cells and optical filters. In addition, the spectrum of the pulsed solar simulator was measured using a high‐speed CMOS spectrometer, allowing the calculation of the spectral mismatch correction factor. Merging these two techniques results in the hybrid corrected pseudo‐isotype (HCPI) characterization method, which shows a fast and accurate performance with a simplified procedure based on a single‐source solar simulator. Pseudo‐isotypes are easily adaptable to new cell designs by simply using a different filter, hence allowing the characterization of new multijunction solar cell architectures.

More information

Item ID: 63885
DC Identifier: http://oa.upm.es/63885/
OAI Identifier: oai:oa.upm.es:63885
DOI: 10.1002/pip.3128
Official URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pip.3128
Deposited by: Memoria Investigacion
Deposited on: 22 Sep 2020 07:04
Last Modified: 29 Sep 2020 08:48
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