Enhancement of optical absorption in Ga-chalcopirite-based intermediate-band materials for high efficiency solar cells

Aguilera Bonet, Irene and Palacios Clemente, Pablo and Wahnón Benarroch, Perla (2010). Enhancement of optical absorption in Ga-chalcopirite-based intermediate-band materials for high efficiency solar cells. "Solar Energy Materials and Solar Cells", v. 94 (n. 11); pp. 1903-1906. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2010.06.019.

Description

Title: Enhancement of optical absorption in Ga-chalcopirite-based intermediate-band materials for high efficiency solar cells
Author/s:
  • Aguilera Bonet, Irene
  • Palacios Clemente, Pablo
  • Wahnón Benarroch, Perla
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Date: July 2010
Volume: 94
Subjects:
Freetext Keywords: Chalcopyrites; Intermediate band; Optical properties
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnologías Especiales Aplicadas a la Telecomunicación [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We present absorption properties enhancement for two CuGaS2-based intermediate-band materials, as promising compounds for high efficiency, lower-cost photovoltaic devices. Previous band diagrams calculations predicted that these materials present a partially filled localized band within the band gap of the host semiconductor, which would increase the absorption of low-energy photons, creating additional electron–hole pairs respect to a conventional semiconductor. This could ideally result in an increase of the photocurrent of the cell without the fall of the open-circuit voltage. In this paper we show, using density functional methods, the effect of this intermediate band on the optical properties of the derived alloys. We highlight the significant enhancement of the absorption coefficient observed in the most intense range of the solar emission and we study the reflectance and transmittance properties of the materials in order to understand the effect of the thickness of the sample on the optical properties. We compare two different substituents of the Ga atoms in CuGaS2, namely, Ti and Cr atoms, able to form the intermediate-band material, and their interest for photovoltaic applications.

More information

Item ID: 7297
DC Identifier: http://oa.upm.es/7297/
OAI Identifier: oai:oa.upm.es:7297
DOI: 10.1016/j.solmat.2010.06.019
Official URL: http://www.elsevier.com
Deposited by: Memoria Investigacion
Deposited on: 09 Jun 2011 10:54
Last Modified: 18 Sep 2015 10:26
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