Enhancement of optical absorption in Ga-chalcopirite-based intermediate-band materials for high efficiency solar cells

Aguilera Bonet, Irene; Palacios Clemente, Pablo y Wahnón Benarroch, Perla (2010). Enhancement of optical absorption in Ga-chalcopirite-based intermediate-band materials for high efficiency solar cells. "Solar Energy Materials and Solar Cells", v. 94 (n. 11); pp. 1903-1906. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2010.06.019.

Descripción

Título: Enhancement of optical absorption in Ga-chalcopirite-based intermediate-band materials for high efficiency solar cells
Autor/es:
  • Aguilera Bonet, Irene
  • Palacios Clemente, Pablo
  • Wahnón Benarroch, Perla
Tipo de Documento: Artículo
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Fecha: Julio 2010
Volumen: 94
Materias:
Palabras Clave Informales: Chalcopyrites; Intermediate band; Optical properties
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnologías Especiales Aplicadas a la Telecomunicación [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

We present absorption properties enhancement for two CuGaS2-based intermediate-band materials, as promising compounds for high efficiency, lower-cost photovoltaic devices. Previous band diagrams calculations predicted that these materials present a partially filled localized band within the band gap of the host semiconductor, which would increase the absorption of low-energy photons, creating additional electron–hole pairs respect to a conventional semiconductor. This could ideally result in an increase of the photocurrent of the cell without the fall of the open-circuit voltage. In this paper we show, using density functional methods, the effect of this intermediate band on the optical properties of the derived alloys. We highlight the significant enhancement of the absorption coefficient observed in the most intense range of the solar emission and we study the reflectance and transmittance properties of the materials in order to understand the effect of the thickness of the sample on the optical properties. We compare two different substituents of the Ga atoms in CuGaS2, namely, Ti and Cr atoms, able to form the intermediate-band material, and their interest for photovoltaic applications.

Más información

ID de Registro: 7297
Identificador DC: http://oa.upm.es/7297/
Identificador OAI: oai:oa.upm.es:7297
Identificador DOI: 10.1016/j.solmat.2010.06.019
URL Oficial: http://www.elsevier.com
Depositado por: Memoria Investigacion
Depositado el: 09 Jun 2011 10:54
Ultima Modificación: 18 Sep 2015 10:26
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