Simulation of high brightness tapered lasers

Esquivias Moscardo, Ignacio and Odriozola Franco, Helena and Garcia Tijero, Jose Manuel and Borruel Navarro, Luis and Minguez, A.M. and Michel, N. and Calligaro, M. and Lecomte, M. and Parillaud, O. and Krakowski, M. (2010). Simulation of high brightness tapered lasers. In: "SPIE Photonics West 2010", 23/06/2010 - 28/06/2010, San Francisco, EEUU.


Title: Simulation of high brightness tapered lasers
  • Esquivias Moscardo, Ignacio
  • Odriozola Franco, Helena
  • Garcia Tijero, Jose Manuel
  • Borruel Navarro, Luis
  • Minguez, A.M.
  • Michel, N.
  • Calligaro, M.
  • Lecomte, M.
  • Parillaud, O.
  • Krakowski, M.
Item Type: Presentation at Congress or Conference (Article)
Event Title: SPIE Photonics West 2010
Event Dates: 23/06/2010 - 28/06/2010
Event Location: San Francisco, EEUU
Title of Book: Proceedings of SPIE Photonics West 2010
Date: 2010
Volume: 7616
Freetext Keywords: Semiconductor lasers, High brightness lasers, tapered lasers, modeling, simulation, thermal effects
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Fotónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Tapered semiconductor lasers have demonstrated both high power and good beam quality, and are of primary interest for those applications demanding high brightness optical sources. The complex non-linear interaction between the optical field and the active material requires accurate numerical simulations to improve the device design and to understand the underlying physics. In this work we present results on the design and simulation of tapered lasers by means of a Quasi- 3D steady-state single-frequency model. The results are compared with experiments on Al-free active region devices emitting at 1060 nm. The performance of devices based on symmetric and asymmetric epitaxial designs is compared and the influence of the design on the beam properties is analyzed. The role of thermal effects on the beam properties is experimentally characterized and analyzed by means of the numerical simulations. Tapered lasers with separate electrical contacts in the straight and tapered sections, based on symmetrical and asymmetrical epitaxial designs are also presented and analyzed

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Item ID: 7494
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Deposited by: Memoria Investigacion
Deposited on: 17 Jun 2011 08:22
Last Modified: 20 Apr 2016 16:38
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