Simulation of facet heating in high-power red lasers

Garcia Tijero, Jose Manuel; Odriozola Franco, Helena; Esquivias Moscardo, Ignacio; Martín Minguez, Alfredo; Borruel Navarro, Luis; Gómez Iglesias, A.; Reufer, M.; Bou Sanayeh, M.; Brick, P.; Linder, N.; Ziegler, M. y Tomm, J. W. (2010). Simulation of facet heating in high-power red lasers. En: "Physics and simulation of optoelectronic devices XVIII", 25/01/2010 - 28/01/2010, San Francisco, USA. ISBN 9780819479938. https://doi.org/10.1117/12.841970.

Descripción

Título: Simulation of facet heating in high-power red lasers
Autor/es:
  • Garcia Tijero, Jose Manuel
  • Odriozola Franco, Helena
  • Esquivias Moscardo, Ignacio
  • Martín Minguez, Alfredo
  • Borruel Navarro, Luis
  • Gómez Iglesias, A.
  • Reufer, M.
  • Bou Sanayeh, M.
  • Brick, P.
  • Linder, N.
  • Ziegler, M.
  • Tomm, J. W.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: Physics and simulation of optoelectronic devices XVIII
Fechas del Evento: 25/01/2010 - 28/01/2010
Lugar del Evento: San Francisco, USA
Título del Libro: Proceedings of SPIE, The International Society for Optical Engineering
Fecha: Febrero 2010
ISBN: 9780819479938
Volumen: 7597
Materias:
Palabras Clave Informales: Laser simulation, facet heating, non absorbing mirror, red laser, high power lasers
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Fotónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

A two-dimensional self-consistent laser model has been used for the simulation of the facet heating of red emitting AlGaInP lasers. It solves in the steady-state the complete semiconductor optoelectronic and thermal equations in the epitaxial and longitudinal directions and takes into account the population of different conduction band valleys. The model considers the possibility of two independent mechanisms contributing to the facet heating: recombination at surface traps and optical absorption at the facet. The simulation parameters have been calibrated by comparison with measurements of the temperature dependence of the threshold current and slope efficiency of broad-area lasers. Facet temperature has been measured by micro-Raman spectrometry in devices with standard and non absorbing mirrors evidencing an effective decrease of the facet heating due to the non absorbing mirrors. A good agreement between experimental values and calculations is obtained for both devices when a certain amount of surface traps and optical absorption is assumed. A simulation analysis of the effect of non absorbing mirrors in the reduction of facet heating in terms of temperature, carrier density, material gain and Shockly-Read-Hall recombination rate profiles is provided.

Más información

ID de Registro: 7646
Identificador DC: http://oa.upm.es/7646/
Identificador OAI: oai:oa.upm.es:7646
Identificador DOI: 10.1117/12.841970
Depositado por: Memoria Investigacion
Depositado el: 04 Jul 2011 11:15
Ultima Modificación: 20 Abr 2016 16:43
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