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ORCID: https://orcid.org/0000-0002-8357-6413 and Martí Vega, Antonio
ORCID: https://orcid.org/0000-0002-8841-7091
(2010).
On the Partial Filling of the Intermediate Band in IB Solar Cells.
"IEEE Transactions on Electron Devices", v. 57
(n. 6);
pp. 1201-1207.
ISSN 0018-9383.
https://doi.org/10.1109/TED.2010.2045681.
| Título: | On the Partial Filling of the Intermediate Band in IB Solar Cells |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | IEEE Transactions on Electron Devices |
| Fecha: | Junio 2010 |
| ISSN: | 0018-9383 |
| Volumen: | 57 |
| Número: | 6 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Intermediate band (IB), quantum dot (QD), solar cell. |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
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Based on a generalized model of the Shockley-Read-Hall (SRH) statistics published elsewhere, the effect of the partial filling of the intermediate band (IB) in IB solar cells and the ways of producing it are analyzed, as is its influence on the electron-hole pair generation by subband-gap photons. The differences between cells with the conduction band and the IB thermally coupled and uncoupled are stressed. This paper is oriented toward the explanation of the operation of quantum-dot solar cells, where the IB is formed from electron-confined states but can also be applicable to other IB systems.
| ID de Registro: | 8331 |
|---|---|
| Identificador DC: | https://oa.upm.es/8331/ |
| Identificador OAI: | oai:oa.upm.es:8331 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5484968 |
| Identificador DOI: | 10.1109/TED.2010.2045681 |
| URL Oficial: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumb... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 20 Jul 2011 17:54 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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