On the Partial Filling of the Intermediate Band in IB Solar Cells

Luque López, Antonio and Martí Vega, Antonio (2010). On the Partial Filling of the Intermediate Band in IB Solar Cells. "IEEE Transactions on Electron Devices", v. 57 (n. 6); pp. 1201-1207. ISSN 0018-9383. https://doi.org/10.1109/TED.2010.2045681.

Description

Title: On the Partial Filling of the Intermediate Band in IB Solar Cells
Author/s:
  • Luque López, Antonio
  • Martí Vega, Antonio
Item Type: Article
Título de Revista/Publicación: IEEE Transactions on Electron Devices
Date: June 2010
ISSN: 0018-9383
Volume: 57
Subjects:
Freetext Keywords: Intermediate band (IB), quantum dot (QD), solar cell.
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Based on a generalized model of the Shockley-Read-Hall (SRH) statistics published elsewhere, the effect of the partial filling of the intermediate band (IB) in IB solar cells and the ways of producing it are analyzed, as is its influence on the electron-hole pair generation by subband-gap photons. The differences between cells with the conduction band and the IB thermally coupled and uncoupled are stressed. This paper is oriented toward the explanation of the operation of quantum-dot solar cells, where the IB is formed from electron-confined states but can also be applicable to other IB systems.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7211640IBPOWERUnspecifiedIntermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost

More information

Item ID: 8331
DC Identifier: http://oa.upm.es/8331/
OAI Identifier: oai:oa.upm.es:8331
DOI: 10.1109/TED.2010.2045681
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=5466557&arnumber=5447671&tag=1
Deposited by: Memoria Investigacion
Deposited on: 20 Jul 2011 17:54
Last Modified: 31 Oct 2014 10:15
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