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In situ control of As dimer orientation on Ge(100) surfaces
Cita
Brückner, Sebastian, Supplie, Oliver, Barrigón Montañés, Enrique, Luczak, Johannes, Kleinschmidt, Peter, Rey-Stolle Prado, Ignacio 
ORCID: https://orcid.org/0000-0002-4919-5609, Döscher, Henning and Hannappel, Thomas
(2012).
In situ control of As dimer orientation on Ge(100) surfaces.
"Applied Physics Letters", v. 101
(n. 12);
pp..
ISSN 0003-6951.
https://doi.org/10.1063/1.4754122.
ORCID: https://orcid.org/0000-0002-4919-5609, Döscher, Henning and Hannappel, Thomas
(2012).
In situ control of As dimer orientation on Ge(100) surfaces.
"Applied Physics Letters", v. 101
(n. 12);
pp..
ISSN 0003-6951.
https://doi.org/10.1063/1.4754122.
Descripción
| Título: | In situ control of As dimer orientation on Ge(100) surfaces |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Applied Physics Letters |
| Fecha: | Septiembre 2012 |
| ISSN: | 0003-6951 |
| Volumen: | 101 |
| Número: | 12 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | annealing, arsenic, elemental semiconductors, germanium, low energy electron diffraction, MOCVD, reflectivity, scanning tunnelling microscopy, semiconductor epitaxial layers, semiconductor growth, X-ray photoelectron spectra |
| Escuela: | Instituto de Energía Solar (IES) (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
We investigated the preparation of single domain Ge(100):As surfaces in a metal-organic vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) of vicinal substrates change when arsenic is supplied either by tertiarybutylarsine or by background As4 during annealing. Low energy electron diffraction shows mutually perpendicular orientations of dimers, scanning tunneling microscopy reveals distinct differences in the step structure, and x-ray photoelectron spectroscopy confirms differences in the As coverage of the Ge(100): As samples. Their RAS signals consist of contributions related to As dimer orientation and to step structure, enabling precise in situ control over preparation of single domain Ge(100): As surfaces.
Más información
| ID de Registro: | 16227 |
|---|---|
| Identificador DC: | https://oa.upm.es/16227/ |
| Identificador OAI: | oai:oa.upm.es:16227 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/3110627 |
| Identificador DOI: | 10.1063/1.4754122 |
| URL Oficial: | http://apl.aip.org/resource/1/applab/v101/i12/p121... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 28 Jul 2013 08:20 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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