Full text
Preview |
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview |
Brückner, Sebastian, Supplie, Oliver, Barrigón Montañés, Enrique, Luczak, Johannes, Kleinschmidt, Peter, Rey-Stolle Prado, Ignacio ORCID: https://orcid.org/0000-0002-4919-5609, Döscher, Henning and Hannappel, Thomas
(2012).
In situ control of As dimer orientation on Ge(100) surfaces.
"Applied Physics Letters", v. 101
(n. 12);
pp..
ISSN 0003-6951.
https://doi.org/10.1063/1.4754122.
Title: | In situ control of As dimer orientation on Ge(100) surfaces |
---|---|
Author/s: |
|
Item Type: | Article |
Título de Revista/Publicación: | Applied Physics Letters |
Date: | September 2012 |
ISSN: | 0003-6951 |
Volume: | 101 |
Subjects: | |
Freetext Keywords: | annealing, arsenic, elemental semiconductors, germanium, low energy electron diffraction, MOCVD, reflectivity, scanning tunnelling microscopy, semiconductor epitaxial layers, semiconductor growth, X-ray photoelectron spectra |
Faculty: | Instituto de Energía Solar (IES) (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Preview |
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview |
We investigated the preparation of single domain Ge(100):As surfaces in a metal-organic vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) of vicinal substrates change when arsenic is supplied either by tertiarybutylarsine or by background As4 during annealing. Low energy electron diffraction shows mutually perpendicular orientations of dimers, scanning tunneling microscopy reveals distinct differences in the step structure, and x-ray photoelectron spectroscopy confirms differences in the As coverage of the Ge(100): As samples. Their RAS signals consist of contributions related to As dimer orientation and to step structure, enabling precise in situ control over preparation of single domain Ge(100): As surfaces.
Item ID: | 16227 |
---|---|
DC Identifier: | https://oa.upm.es/16227/ |
OAI Identifier: | oai:oa.upm.es:16227 |
DOI: | 10.1063/1.4754122 |
Official URL: | http://apl.aip.org/resource/1/applab/v101/i12/p121... |
Deposited by: | Memoria Investigacion |
Deposited on: | 28 Jul 2013 08:20 |
Last Modified: | 21 Apr 2016 16:32 |