Full text
|
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview |
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
Citation
Ulloa Herrero, José María and Llorens, J.M. and Alén Millán, Benito and Reyes, D.F. and Sales, D.L. and Gonzalez, D. and Hierro Cano, Adrián (2012). High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing. "Applied Physics Letters", v. 101 (n. 25); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4773008.
Description
| Title: | High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing |
|---|---|
| Author/s: |
|
| Item Type: | Article |
| Título de Revista/Publicación: | Applied Physics Letters |
| Date: | December 2012 |
| ISSN: | 0003-6951 |
| Volume: | 101 |
| Subjects: | |
| Freetext Keywords: | gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, radiative lifetimes, rapid thermal annealing, semiconductor quantum dots |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Otro |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.
Funding Projects
| Type | Code | Acronym | Leader | Title |
|---|---|---|---|---|
| Government of Spain | MAT2010-15206 | Unspecified | Unspecified | Unspecified |
| Government of Spain | TEC2011-29120-C05-04 | Unspecified | Unspecified | Unspecified |
| Madrid Regional Government | S2009/ESP-1503 | Unspecified | Unspecified | Unspecified |
More information
| Item ID: | 16349 |
|---|---|
| DC Identifier: | https://oa.upm.es/16349/ |
| OAI Identifier: | oai:oa.upm.es:16349 |
| DOI: | 10.1063/1.4773008 |
| Official URL: | http://apl.aip.org/resource/1/applab/v101/i25/p253112_s1?ver=pdfcov |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 27 Jul 2013 10:40 |
| Last Modified: | 30 Nov 2022 09:00 |
