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Optically triggered infrared photodetector
Cita
Ramiro González, Iñigo 
ORCID: https://orcid.org/0000-0002-9663-4002, Martí Vega, Antonio ORCID: https://orcid.org/0000-0002-8841-7091, Antolín Fernández, Elisa ORCID: https://orcid.org/0000-0002-5220-2849, Datas Medina, Alejandro ORCID: https://orcid.org/0000-0001-5964-3818, Luque López, Antonio ORCID: https://orcid.org/0000-0002-8357-6413, Ripalda Cobián, Jose María and González, Yolanda
(2014).
Optically triggered infrared photodetector.
"Nanoscale Research Letters"
;
ISSN 1530-6992.
https://doi.org/10.1021/nl503437z.
ORCID: https://orcid.org/0000-0002-9663-4002, Martí Vega, Antonio ORCID: https://orcid.org/0000-0002-8841-7091, Antolín Fernández, Elisa ORCID: https://orcid.org/0000-0002-5220-2849, Datas Medina, Alejandro ORCID: https://orcid.org/0000-0001-5964-3818, Luque López, Antonio ORCID: https://orcid.org/0000-0002-8357-6413, Ripalda Cobián, Jose María and González, Yolanda
(2014).
Optically triggered infrared photodetector.
"Nanoscale Research Letters"
;
ISSN 1530-6992.
https://doi.org/10.1021/nl503437z.
Descripción
| Título: | Optically triggered infrared photodetector |
|---|---|
| Autor/es: |
|
| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Nanoscale Research Letters |
| Fecha: | 15 Diciembre 2014 |
| ISSN: | 1530-6992 |
| Materias: | |
| ODS: | |
| Escuela: | Instituto de Energía Solar (IES) (UPM) |
| Departamento: | Electrónica Física |
| Grupo Investigación UPM: | Silicio y Nuevos Conceptos para Células Solares |
| Licencias Creative Commons: | Ninguna |
Resumen
We demonstrate a new class of semiconductor
device: the optically triggered infrared photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal
incidence infrared detection in the 2−6 μm range. The detection is optically triggered by a 590 nm light-emitting diode.
Furthermore, the detection gain is achieved in our device without an increase of the noise level. The novel characteristics of OTIPs open up new possibilities for third generation infrared imaging systems
Proyectos asociados
Tipo
Código
Acrónimo
Responsable
Título
Gobierno de España
ENE2012-37804-C02
Sin especificar
Sin especificar
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Más información
| ID de Registro: | 33159 |
|---|---|
| Identificador DC: | https://oa.upm.es/33159/ |
| Identificador OAI: | oai:oa.upm.es:33159 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/4084766 |
| Identificador DOI: | 10.1021/nl503437z |
| URL Oficial: | https://pubs.acs.org/doi/ipdf/10.1021/nl503437z |
| Depositado por: | Prof. Antonio Luque López |
| Depositado el: | 19 Dic 2014 12:47 |
| Ultima Modificación: | 08 May 2026 07:51 |
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